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IDT70V631S12BCGI

Description
Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
Categorystorage    storage   
File Size201KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance  
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IDT70V631S12BCGI Overview

Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256

IDT70V631S12BCGI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeBGA
package instructionLBGA,
Contacts256
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time12 ns
JESD-30 codeS-PBGA-B256
JESD-609 codee1
length17 mm
memory density4718592 bit
Memory IC TypeDUAL-PORT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals256
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX18
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.7 mm
Maximum supply voltage (Vsup)3.45 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width17 mm
Base Number Matches1
HIGH-SPEED 3.3V 256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
IDT70V631S
Features
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V631 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
UB
L
LB
L
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package.
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 128-pin Thin Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0 R
CE
1 R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
17L
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
17R
A
0R
OE
L
CE
0L
CE
1L
R/W
L
BUSY
L
SEM
L
INT
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0 R
CE
1 R
R/W
R
BUSY
R
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
5622 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
OCTOBER 2003
DSC-5622/5
1
©2003 Integrated Device Technology, Inc.

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Description Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 Dual-Port SRAM, 256KX18, 15ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 Dual-Port SRAM, 256KX18, 15ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 Dual-Port SRAM, 256KX18, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208 Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208 Array/Network Resistor, Isolated, 0.1W, 158ohm, 100V, 0.5% +/-Tol, -100,100ppm/Cel, 1408, Dual-Port SRAM, 256KX18, 10ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A EAR99 3A991.B.2.A 3A991.B.2.A
Number of terminals 256 128 128 208 128 128 208 16 128 256
Maximum operating temperature 85 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 150 °C 70 °C 70 °C
Package form GRID ARRAY, LOW PROFILE FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH SMT FLATPACK, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE
Is it lead-free? Lead free Lead free Contains lead Lead free Lead free Contains lead Lead free - Contains lead Lead free
Is it Rohs certified? conform to conform to incompatible conform to conform to incompatible conform to - incompatible conform to
Parts packaging code BGA QFP QFP BGA QFP QFP BGA - QFP BGA
package instruction LBGA, LFQFP, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 LFBGA, LFQFP, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 LFBGA, - 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 LBGA,
Contacts 256 128 128 208 128 128 208 - 128 256
Maximum access time 12 ns 15 ns 15 ns 15 ns 12 ns 12 ns 12 ns - 10 ns 12 ns
JESD-30 code S-PBGA-B256 R-PQFP-G128 R-PQFP-G128 S-PBGA-B208 R-PQFP-G128 R-PQFP-G128 S-PBGA-B208 - R-PQFP-G128 S-PBGA-B256
JESD-609 code e1 e3 e0 e1 e3 e0 e1 - e0 e1
length 17 mm 20 mm 20 mm 15 mm 20 mm 20 mm 15 mm - 20 mm 17 mm
memory density 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit - 4718592 bit 4718592 bit
Memory IC Type DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM - DUAL-PORT SRAM DUAL-PORT SRAM
memory width 18 18 18 18 18 18 18 - 18 18
Humidity sensitivity level 3 3 3 3 3 3 3 - 3 3
Number of functions 1 1 1 1 1 1 1 - 1 1
word count 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words - 262144 words 262144 words
character code 256000 256000 256000 256000 256000 256000 256000 - 256000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
organize 256KX18 256KX18 256KX18 256KX18 256KX18 256KX18 256KX18 - 256KX18 256KX18
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA LFQFP LFQFP LFBGA LFQFP LFQFP LFBGA - LFQFP LBGA
Package shape SQUARE RECTANGULAR RECTANGULAR SQUARE RECTANGULAR RECTANGULAR SQUARE - RECTANGULAR SQUARE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 240 260 260 240 260 - 240 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
Maximum seat height 1.7 mm 1.6 mm 1.6 mm 1.7 mm 1.6 mm 1.6 mm 1.7 mm - 1.6 mm 1.7 mm
Maximum supply voltage (Vsup) 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V - 3.45 V 3.45 V
Minimum supply voltage (Vsup) 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V - 3.15 V 3.15 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V - 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES - YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS - CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL - COMMERCIAL COMMERCIAL
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) MATTE TIN TIN LEAD Tin/Silver/Copper (Sn/Ag/Cu) MATTE TIN TIN LEAD Tin/Silver/Copper (Sn/Ag/Cu) - TIN LEAD Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL GULL WING GULL WING BALL GULL WING GULL WING BALL - GULL WING BALL
Terminal pitch 1 mm 0.5 mm 0.5 mm 0.8 mm 0.5 mm 0.5 mm 0.8 mm - 0.5 mm 1 mm
Terminal location BOTTOM QUAD QUAD BOTTOM QUAD QUAD BOTTOM - QUAD BOTTOM
Maximum time at peak reflow temperature 30 30 20 30 30 20 30 - 20 30
width 17 mm 14 mm 14 mm 15 mm 14 mm 14 mm 15 mm - 14 mm 17 mm
Base Number Matches 1 1 1 1 1 1 1 - 1 1
Maker - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) - IDT (Integrated Device Technology) -
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