TZ375N18KOF datasheet, PDF - EEWORLD Datasheet

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TZ375N18KOF: DescriptionSilicon Controlled Rectifier, 1050A I(T)RMS, 375000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, MODULE-4; CategoryAnalog mixed-signal IC Trigger device; File Size455KB，13 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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TZ375N18KOF Overview

Silicon Controlled Rectifier, 1050A I(T)RMS, 375000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, MODULE-4

TZ375N18KOF Parametric

Parameter Name	Attribute value
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-XXFM-X4
Contacts	4
Reach Compliance Code	compliant
Shell connection	ISOLATED
Configuration	SINGLE
Maximum DC gate trigger current	250 mA
Maximum DC gate trigger voltage	1.5 V
Quick connection description	G-GR
Description of screw terminals	A-K
Maximum holding current	300 mA
JESD-30 code	R-XXFM-X4
JESD-609 code	e3
Maximum leakage current	100 mA
On-state non-repetitive peak current	11600 A
Number of components	1
Number of terminals	4
Maximum on-state current	375000 A
Maximum operating temperature	125 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum rms on-state current	1050 A
Off-state repetitive peak voltage	1800 V
Repeated peak reverse voltage	1800 V
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Trigger device type	SCR
Base Number Matches	1

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Netz-Thyristor-Modul

Phase Control Thyristor Module

Datenblatt / Data sheet

TZ375N

Kenndaten

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 85°C

= 33°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

6.Kennbuchstabe / 6 letter F

= -40°C... T

vj max

= +25°C... T

vj max

Elektrische Eigenschaften

DRM

RRM

1800

1900

2000 V

2200 V

2000 V

2200 V

2100 V

2300 V

1050 A

375 A

669 A

11.600 A

10.600 A

672.800 A²s

561.800 A²s

120 A/µs

DSM

RSM

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

1000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= T

vj max

, i

= 1800 A

= T

vj max

, i

= 600 A

= T

vj max

= T

vj max

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

(TO)

max.

2,02 V

1,25 V

0,85 V

0,56 mΩ

max.

250 mA

1,5 V

10 mA

5 mA

0,2 V

300 mA

1200 mA

100 mA

4 µs

= 25°C, v

= 6 V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25 °C,i

= 1 A, di

/dt = 1 A/µs

, i

prepared by: C.Drilling

approved by: M. Leifeld

date of publication:

revision:

11.03.04

BIP AC / 04-03-11, C. Drilling

A 07/03

Seite/page

1/12

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