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TZ530N30KOC

Description
Silicon Controlled Rectifier, 530000mA I(T), 3000V V(RRM), MODULE-4
CategoryAnalog mixed-signal IC    Trigger device   
File Size415KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

TZ530N30KOC Overview

Silicon Controlled Rectifier, 530000mA I(T), 3000V V(RRM), MODULE-4

TZ530N30KOC Parametric

Parameter NameAttribute value
Parts packaging codeMODULE
package instructionMODULE-4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage2 V
Quick connection descriptionG-GR
Description of screw terminalsA-K
Maximum holding current500 mA
JESD-30 codeR-XXFM-X4
Maximum leakage current250 mA
On-state non-repetitive peak current22 A
Number of terminals4
Maximum on-state current530000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Repeated peak reverse voltage3000 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR
Base Number Matches1
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TZ530N
TZ530N
Kenndaten
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
C
= 30°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter C
6.Kennbuchstabe / 6
th
letter F
T
vj
= -40°C... T
vj max
T
vj
= +25°C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
3000
3400
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
3000
3400
3100
3500
3200 V
3600 V
3200 V
3600 V
3300 V
3700 V
1500 A
530 A
955 A
22.000 A
20.000 A
2.420.000 A²s
2.000.000 A²s
80 A/µs
500 V/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 3000 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
max.
2,65 V
1,05 V
0,49 mΩ
max.
max.
max.
max.
max.
max.
max.
max.
max.
250 mA
2 V
10 mA
5 mA
0,25 V
500 mA
2500 mA
250 mA
4 µs
T
vj
= 25°C, v
D
= 6 V, R
GK
10
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25 °C,i
GM
= 1 A, di
G
/dt = 1 A/µs
i
D
, i
R
t
gd
prepared by: C.Drilling
approved by: J. Novotny
date of publication:
revision:
06.03.03
1
BIP AC / 00-08-21, K.-A. Rüther
A 17/00
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