DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2357/2SK2358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
FEATURES
•
Low On-Resistance
2SK2357: R
DS(on)
= 0.9
Ω
(V
GS
= 10 V, I
D
= 3.0 A)
15.0 ±0.3
2SK2358: R
DS(on)
= 1.0
Ω
(V
GS
= 10 V, I
D
= 3.0 A)
•
Low C
iss
C
iss
= 1050 pF TYP.
•
High Avalanche Capability Ratings
•
Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (2SK2357/2358)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
a
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
450/500
±30
±6.0
±24
35
2.0
150
6.0
17
V
V
A
A
W
W
°C
4 ±0.2
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
13.5 MIN.
12.0 ±0.2
3 ±0.1
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
1
2 3
–55 to +150
°C
A
mJ
MP-45F (ISOLATED TO-220)
Drain
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
Body
Diode
Gate
Source
The information in this document is subject to change without notice.
Document No. D11392EJ3V0DS00 (3rd edition)
(Previous No. TC-2498)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994
2SK2357/2SK2358
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
Drain to Source On-Resistance
SYMBOL
R
DS(on)
MIN.
TYP.
0.7
0.8
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
1050
200
26
14
9
56
14
27
5.5
12
1.0
300
1.5
2.5
3.0
100
±100
MAX.
0.9
1.0
3.5
V
S
UNIT
Ω
TEST CONDITIONS
V
GS
= 10 V
I
D
= 3.0 A
2SK2357
2SK2358
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 3.0 A
V
DS
= V
DSS
, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 3.0 A
V
GS(on)
= 10 V
V
DD
= 150 V
R
G
= 10
Ω
R
L
= 50
Ω
I
D
= 6.0 A
V
DD
= 400 V
V
GS
= 10 V
I
F
= 6.0 A, V
GS
= 0
I
F
= 6.0 A, V
GS
= 0
di/dt = 50 A/
µ
s
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
R
G
= 25
Ω
PG
V
GS
= 20 - 0 V
50
Ω
L
V
DD
D.U.T.
R
L
V
GS
V
DD
Wave
Form
V
GS
10 %
0
V
GS (on)
90 %
PG.
R
G
R
G
= 10
Ω
I
D
BV
DSS
I
AS
I
D
V
DD
V
DS
90 %
90 %
10 %
0
t
d (on)
t
on
t
r
V
GS
0
t
t = 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave
Form
I
D
10 %
t
d (off)
t
off
t
f
Starting T
ch
Test Circuit 3 Gate Charge
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2357/2SK2358
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
50
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
80
60
40
30
40
20
20
10
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
T
c
- Case Temperature - °C
T
c
- Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
FORWARD BIAS SAFE OPERATING AREA
100
I
D (pulse)
PW
=1
10
0
0
s
10
s
1
m
s
10
Po
m
s
we
10
rD
0
m
iss
1.0
s
ipa
tio
n
Lim
ite
T
c
= 25 °C
d
Single Pulse
0.1
0.1
10
100
1000
ted
mi 0 V)
Li 1
n)
(o
=
S
S
R
D
t V
G
(a
I
D (DC)
10
I
D
- Drain Current - A
I
D
- Drain Current - A
8
6
4
2
V
GS
= 20 V
10 V
8V
6V
µ
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
µ
0
4
8
12
16
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
1
T
a
= –25 °C
25 °C
75 °C
125 °C
0.1
0.05
0
5
10
15
V
GS
- Gate to Source Voltage - V
3
2SK2357/2SK2358
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-c) (t)
- Transient Thermal Resistance - °C/W
1000
100
R
th(ch-a)
= 62.5 °C/W
10
R
th(ch-c)
= 3.57 °C/W
1
0.1
T
C
= 25 °C
Single Pulse
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
0.01
PW - Pulse Width - s
IyfsI - Forward Transfer Admittance - S
100
Ta = –25 °C
25 °C
75 °C
125 °C
R
DS(on)
- Drain to Source On-State Resistance -
Ω
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5
Pulsed
10
1.0
I
D
= 6 A
I
D
= 3 A
0.5
1.0
0.1
1.0
10
100
0
10
20
30
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESITANCE vs. DRAIN CURRENT
Pulsed
V
GS(off)
- Gate to Source Cutoff Voltage - V
3.0
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
= 10 V
I
D
= 1 mA
R
DS(on)
- Drain to Source On-State Resistance -
Ω
4.0
2.0
3.0
2.0
1.0
1.0
0
1.0
10
I
D
- Drain Current - A
100
0
–50
0
50
100
150
T
ch
- Channel Temperature - °C
4
2SK2357/2SK2358
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
1.6
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
10
1.2
I
D
= 6 A
3A
0.8
1.0
10 V
V
GS
= 0
0.4
V
GS
= 10 V
–50
0
50
100
150
0.1
0.05
0
0.5
1.0
1.5
0
T
ch
- Channel Temperature - °C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
5 000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
1000
t
r
t
f
100
t
d(on)
t
d(off)
10
V
DD
= 150 V
V
GS
= 10 V
R
G
= 25
Ω
0.1
1.0
10
100
V
GS
= 0
f = 1.0 MHz
C
iss
1 000
C
oss
100
C
rss
10
5
1
10
100
1000
0.5
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
800
t
rr
- Reverse Recovery Diode - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400
V
DS
- Drain to Source Voltage - V
600
300
V
DD
= 400 V
250 V
125 V
V
GS
14
12
10
400
200
8
6
200
100
V
DS
4
2
0
20
30
40
0
1.0
10
I
D
- Drain Current - A
100
0
10
Q
g
- Gate Charge - nC
5
V
GS
- Gate to Source Voltage - V
di/dt = 50 A/
µ
s
V
GS
= 10 V
16
I
D
= 6 A
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