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2SK2358

Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size50KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK2358 Overview

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2357/2SK2358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
FEATURES
Low On-Resistance
2SK2357: R
DS(on)
= 0.9
(V
GS
= 10 V, I
D
= 3.0 A)
15.0 ±0.3
2SK2358: R
DS(on)
= 1.0
(V
GS
= 10 V, I
D
= 3.0 A)
Low C
iss
C
iss
= 1050 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (2SK2357/2358)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
a
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
10
µ
s, Duty Cycle
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
450/500
±30
±6.0
±24
35
2.0
150
6.0
17
V
V
A
A
W
W
°C
4 ±0.2
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
13.5 MIN.
12.0 ±0.2
3 ±0.1
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
1
2 3
–55 to +150
°C
A
mJ
MP-45F (ISOLATED TO-220)
Drain
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
0
Body
Diode
Gate
Source
The information in this document is subject to change without notice.
Document No. D11392EJ3V0DS00 (3rd edition)
(Previous No. TC-2498)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994

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