HUM2005BE3 datasheet, PDF - EEWORLD Datasheet

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HUM2005BE3: DescriptionPin Diode, Silicon, HERMETIC SEALED, AXIAL PACKAGE-2; CategoryDiscrete semiconductor diode; File Size349KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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HUM2005BE3 Overview

Pin Diode, Silicon, HERMETIC SEALED, AXIAL PACKAGE-2

HUM2005BE3 Parametric

Parameter Name	Attribute value
package instruction	O-XALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	SWITCHING
Shell connection	ISOLATED
Configuration	SINGLE
Maximum diode capacitance	4 pF
Diode component materials	SILICON
Maximum diode forward resistance	0.2 Ω
Diode type	PIN DIODE
JESD-30 code	O-XALF-W2
Minority carrier nominal lifetime	30 µs
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
surface mount	NO
technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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HUM2001/HUM2020 SERIES

Pin Diode High Power Stud

DESCRIPTION

KEY FEATURES

High Power Stud Mount Package.

High Zero Bias Impedance

Very Low Inductance and

Capacitance.

No Internal Lead Straps.

Small Mechanical Outline.

APPLICATIONS/BENEFITS

MRI Applications.

High Power Antenna Switching.

VOLTAGE RATING [25°C]

Reverse

Voltage

) – Volts

= 10µA

100V

Part type

WWW .

Microsemi

With high isolation, low loss, and low distortion characteristics, this

Microsemi Power PIN diode is perfect for the high power switching

applications where size and power handling capability are critical.

Its advantages also include the low forward bias resistance and high zero

bias impedance that are essential for low loss, high isolation and wide

bandwidth performance.

Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical

bonds on both sides to achieve high reliability and high surge capability.

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

HUM2001

HUM2005

HUM2010

HUM2015

HUM2020

Style “D”

Insulated Stud

Style “C”

Stud

Style “B”

Round Axial Leads

Style “SM”

Melf

500V

1000V

1500V

2000V

Maximum Ratings @ 25ºC

(UNLESS OTHERWISE SPECIFIED)

Parameter

Maximum Reverse

Voltage

Average Power

Dissipation

@ Stud =50°C

Non-Repetitive

Sinusoidal Surge

Current (8.3 ms)

Storage

Temperature

Range

Operating

Temperature

Range

Thermal resistance

Junction-to Case

“C” Stud only

Symbol

RWM

STG

HUM2001

100

-65 to

+175

-55 to

+150

7.5

HUM2005

500

100

-65 to

+175

-55 to

+150

7.5

TYPE

HUM2010

HUM2015

1000

100

-65 to

+175

-55 to

+150

7.5

1500

100

-65 to

+175

-55 to

+150

7.5

HUM2020

2000

100

-65 to

+175

-55 to

+150

7.5

Unit

°C

HUM2010-2020

°C

°C/W



2000

MSCXXXX.PDF 2002-08-08

Microsemi

Page 1

HUM2005BE3 Related Products

	HUM2005BE3	HUM2020DE3	HUM2001BE3	HUM2001CE3	HUM2005SME3	HUM2010SME3	HUM2015CE3
Description	Pin Diode, Silicon, HERMETIC SEALED, AXIAL PACKAGE-2	Pin Diode, Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, Silicon, HERMETIC SEALED, AXIAL PACKAGE-2	Pin Diode, Silicon, HERMETIC SEALED PACKAGE-1	Pin Diode, Silicon, HERMETIC SEALED, MELF-2	Pin Diode, Silicon, HERMETIC SEALED, MELF-2	Pin Diode, Silicon, HERMETIC SEALED PACKAGE-1
package instruction	O-XALF-W2	O-MXPM-X2	O-XALF-W2	O-MUPM-X1	O-LELF-R2	O-LELF-R2	O-MUPM-X1
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Shell connection	ISOLATED	ISOLATED	ISOLATED	CATHODE	ISOLATED	ISOLATED	CATHODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum diode capacitance	4 pF	4 pF	4 pF	4 pF	4 pF	4 pF	4 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum diode forward resistance	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω
Diode type	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE
JESD-30 code	O-XALF-W2	O-MXPM-X2	O-XALF-W2	O-MUPM-X1	O-LELF-R2	O-LELF-R2	O-MUPM-X1
Minority carrier nominal lifetime	30 µs	30 µs	30 µs	30 µs	30 µs	30 µs	30 µs
Number of components	1	1	1	1	1	1	1
Number of terminals	2	2	2	1	2	2	1
Package body material	UNSPECIFIED	METAL	UNSPECIFIED	METAL	GLASS	GLASS	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	POST/STUD MOUNT	LONG FORM	POST/STUD MOUNT	LONG FORM	LONG FORM	POST/STUD MOUNT
surface mount	NO	NO	NO	NO	YES	YES	NO
technology	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE
Terminal form	WIRE	UNSPECIFIED	WIRE	UNSPECIFIED	WRAP AROUND	WRAP AROUND	UNSPECIFIED
Terminal location	AXIAL	UNSPECIFIED	AXIAL	UPPER	END	END	UPPER
Base Number Matches	1	1	-	-	1	1	-

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