2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-543
1st. Edition
Features
•
Low on-resistance
R
DS
= 20 mΩ typ.
•
High speed switching
•
4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D
1 2
G
3
S
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK2735(L), 2SK2735(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
30
±20
20
80
20
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
2SK2735(L), 2SK2735(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain
current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
Min
30
±20
—
—
1.0
—
—
8
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
20
35
16
750
520
210
16
225
85
90
1.0
40
Max
—
—
±10
10
2.0
28
50
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
V
I
F
= 20A, V
GS
= 0
diF/ dt = 50A/µs
I
F
= 20A, V
GS
= 0
diF/ dt = 50A/µs
Test Conditions
I
D
= 10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
GS
=
±16V,
V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 10V*
1
I
D
= 10A, V
GS
= 4V*
1
I
D
= 10A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
D
= 10A, V
GS
= 10V
R
L
= 1Ω
Gate to source cutoff voltage V
GS(off)
Static drain to source on state R
DS(on)
resistance
Forward transfer admittance
Input capacitance
Output capacitance
R
DS(on)
|y
fs
|
Ciss
Coss
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
See characteristics curves of 2SK2684
3
2SK2735(L), 2SK2735(S)
Main Characteristics
Power vs. Temperature Derating
40
Pch (W)
I
D
(A)
Maximum Safe Operation Area
500
200
100
50
20
10
5
2
1
30
10
µ
s
0
s
Channel Dissipation
Drain Current
PW
C
D
10
=
1
10
m
s
20
m
(1
µ
s
10
Operation in
this area is
limited by R
DS(on)
0
50
100
150
Tc (°C)
200
Case Temperature
Ta = 25
°C
0.5
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V
DS
(V)
r
pe
O
n
io
at
(T
c
sh
o
t)
=
25
°
C
)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 20 A
V
DD
= 5 V
10 V
25 V
V
GS
20
8
V
GS
(V)
Gate to Source Voltage
50
20
40
16
Drain to Source Voltage
30
V
DS
12
10
V
DD
= 25 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
4
0
40
0
4
2SK2735(L), 2SK2735(S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.05
0.02
0.0
1
0.3
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 6.25
°C/W,
Tc = 25
°C
lse
Pu
t
PDM
PW
T
D=
0.03
ho
1s
PW
T
0.01
10
µ
100
µ
1m
10 m
Pulse Width
100 m
PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
Vin
Vin
10 V
50Ω
V
DD
= 10 V
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
t
f
90%
td(on)
tr
5
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