2SK2806-01
FAP-IIIB Series
> Features
-
-
-
-
-
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
Avalanche Rated
N-channel MOS-FET
30V
0,02Ω
35A
30W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
30
35
140
±16
129,3
30
150
-55 ~ +150
* L=0,07mH, V
CC
=12V
> Equivalent Circuit
Unit
V
A
A
V
mJ*
W
°C
°C
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=30V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±16V
V
DS
=0V
I
D
=17,5A
V
GS
=4V
V
GS
=10V
I
D
=17,5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=15V
I
D
=35A
V
GS
=10V
R
GS
=10
Ω
T
ch
=25°C
L = 100µH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
30
1,0
Typ.
1,5
10
0,2
10
0,022
0,014
33
1100
550
240
9
15
75
50
0,98
50
0,08
Max.
2,0
500
1,0
100
0,03
0,02
1650
830
360
15
23
115
75
1,71
16
35
Unit
V
V
µA
mA
nA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
75
4,16
Unit
°C/W
°C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
30V
0,02Ω
2SK2806-01
FAP-IIIB Series
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=17,5A; V
GS
=10V
35A
30W
> Characteristics
Typical Output Characteristics
I
D
=f(V
DS
); 80µs pulse test; T
C
=25°C
Typical Transfer Characteristics
I
D
=f(V
GS
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
[A]
↑
R
DS(ON)
[mΩ]
↑
2
I
D
[A]
1
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80µs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
DS(ON)
[mΩ]
↑
g
fs
[S]
↑
5
V
GS(th)
[V]
4
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristic
V
GS
=f(Qg); I
D
=35A; T
C
=25°C
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80µs pulse test; T
ch
=25°C
↑
C [F]
↑
V
DS
[V]
↑
V
GS
[V]
↑
I
F
[A]
7
8
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Maximum Avalanche Energy vs. starting T
ch
E
AV
=f(starting T
ch
): V
CC
=12V; I
AV
≤
35A
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
th(ch-c)
[K/W]
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
E
AV
[mJ]
10
↑
I
D
[A]
12
starting T
ch
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
N-channel MOS-FET
30V
0,02Ω
2SK2806-01
FAP-IIIB Series
Power Dissipation
P
D
=f(T
C
)
35A
30W
> Characteristics
110
100
90
80
70
P
D
/ P
Dmax
[%]
60
50
40
30
20
10
0
0
25
50
75
T
C
[°C]
100
125
150
Maximum Avalanche Current vs. starting T
ch
I
AV
=f(starting T
ch
)
110
100
90
80
70
I
AV
/ I
AVmax
[%]
60
50
40
30
20
10
0
0
25
50
75
starting T
ch
[°C]
100
125
150
This specification is subject to change without notice!
京公网安备 11010802033920号
EEWORLD
