RF1S4N100SM9A datasheet, PDF - EEWORLD Datasheet

RF1S4N100SM9A: DescriptionPower Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB; CategoryDiscrete semiconductor The transistor; File Size121KB，2 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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RF1S4N100SM9A Overview

Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	4.3 A
Maximum drain-source on-resistance	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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