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2SK2956

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size44KB,9 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SK2956 Overview

Silicon N Channel MOS FET High Speed Power Switching

2SK2956 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220CF
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)50 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)35 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
2SK2956
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-566B (Z)
3rd. Edition
Jun 1998
Features
Low on-resistance
R
DS(on)
= 7mΩ typ.
4V gate drive devices.
High speed switching
Outline
TO–220CFM
D
G
1
2
3
S
1. Gate
2. Drain
3. Source
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