MMUN2211
Series
Bias Resistor Transistor
NPN Silicon
P b
Lead(Pb)-Free
COLLECTOR
3
BASE
1
R1
R2
3
1
2
2
EMITTER
SOT-23
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
(1)
Junction and Storage, Temperature
1. FR-4 @ minimun pad
Symbol
PD
R θJA
TJ,Tstg
Value
246
1.6
625
-65 to +150
Unit
mW
mW / °C
°C /W
°C
Device Marking and Resistor Values
Device
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
Marking
A8A, 24
A8B
A8C, 26
A8D
A8E
A8F
A8G
A8H
R1(k)
10
22
47
10
10
4.7
1.0
2.2
R2(k)
10
22
47
47
Device
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
Marking
A8J
A8K
A8L
A8M
A8R
A8U
R1(k)
4.7
4.7
22
2.2
2.2
100
R2(k)
4.7
47
47
47
∞
∞
∞
∞
1.0
2.2
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1/10
Rev.B
25-Jan-07
MMUN2211
Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutof f Current (V CB= 50 V IE = 0)
,
Collector-Emitter Cutoff Current (VCE= 50 V I B = 0)
,
Emitter-Base Cutof f Current
(VEB= 6.0 V, I C = 0)
Symbol
ICBO
ICEO
IEBO
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
4.0
0.1
-
-
Unit
nAdc
nAdc
mAdc
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
Collector-Base Breakdown Voltage (I C = 10 mA, I E = 0)
Collector-Emitter Breakdown Voltage (Note 2.)
(IC = 2.0 mA, I B = 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 2.)
DC Current Gain
(VCE= 10 V I C = 5.0 mA)
,
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
160
160
-
60
100
140
140
350
350
5.0
15
30
200
150
140
350
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25
Vdc
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(I C
= 10 mA, I B = 5 mA) MMUN2230/MMUN2231
(I C
= 10 mA, I B = 1 mA) MMUN2215/MMUN2216/MMUN2232
MMUN2233/MMUN2234/MMUN2235/MMUN2238
VCE(sat)
Output Voltage (on)
(VCC= 5.0 V VB = 2.5 V R L= 1.0 k
W
)
,
,
(VCC= 5.0 V V B = 3.5 V R L = 1.0 k
W
)
,
,
(VCC= 5.0 V VB = 5.0 V R L = 1.0 k
W
)
,
,
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
VOL
Vdc
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 %.
WEITRON
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MMUN2211
Series
ELECTRICAL CHARACTERISTICS
(TA= 25C unless otherwise noted) (Continued)
Typ
Symbol
Min
Characteristic
ON CHARACTERISTICS
(Note 2) (Continued)
Output Voltage (off) (VCC = 5.0 V,V B = 0.5 V ,R L = 1.0 k
W
)
,
MMUN2230
(V CC= 5.0 V VB = 0.050 V, R L = 1.0 k
W
)
,
MMUN2215
(VCC= 5.0 V V B = 0.25 V, R L = 1.0 k
W
)
MMUN2216
MMUN2233
MMUN2238
Input Resistor
Max
-
Unit
Vdc
VOH
4.9
-
R1
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
k
W
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
1.54
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
2.2
100
1.0
0.21
-
-
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
2.86
100
1.2
0.25
-
-
1.2
0.185
0.56
0.056
Resistor Ratio
MMUN2211/MMUN2212/MMUN2213
MMUN2214
MMUN2215/MMUN2216/MMUN2238
MMUN2241
MMUN2230/MMUN2231/MMUN2232
MMUN2233
MMUN2234
MMUN2235
R 1/R 2
0.8
0.17
-
-
0.8
0.055
0.38
0.038
2. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211
V CE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
PD, POWER DISSIP ATION (MILLIW ATTS)
250
200
1
IC /I B = 10
TA = -25
℃
25
℃
75
℃
0.1
150
100
50
0
-50
R
qJA
= 625
℃
/W
0.01
0
50
100
150
0.001
0
20
40
60
80
TA , AMBIENT TEMPERATURE (5
℃
)
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. VCE(sat) vs. I C
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MMUN2211
Series
TYPICAL
ELECTRICAL CHARACTERISTICS
MMUN2212
hFE, DC CURRENT GAIN (NORMALIZED)
1000
V CE = 10 V
Cob, CAPACITANCE (pF)
TA = 75
℃
25
℃
-25
℃
100
3
4
f = 1 MHz
lE = 0 A
TA = 25
℃
2
1
10
1
10
IC, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
50
V R , REVERSE BIAS VOL TAGE (VOL TS)
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
75
℃
10
25
℃
TA = -25
℃
V in, INPUT VOLTAGE (VOL TS)
10
Figure 4. Output Capcitance
V O = 0.2 V
TA = -25
℃
25
℃
75
℃
1
1
0.1
0.01
VO = 5 V
0
1
2
3
4
5
6
7
8
9
10
0.001
0.1
0
V in, INPUT VOLTAGE (VOL TS)
Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
40
10
20
30
I
C
, COLLECTOR CURRENT (mA)
50
MMUN2211
V CE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
IC/IB = 10
TA = -25
℃
hFE, DC CURRENT GAIN (NORMALIZED)
1
25
℃
1000
V CE = 10 V
TA = 75
℃
0.1
75
℃
100
25
℃
-25
℃
0.01
0.001
0
20
60
40
IC, COLLECTOR CURRENT (mA)
80
10
1
10
IC, COLLECTOR CURRENT (mA )
100
Figure 7. VCE(sat) vs. I C
Figure 8. DC Current Gain
WEITRON
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MMUN2211
Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212
100
f = 1 MHz
lE = 0 A
TA = 25
℃
IC, COLLECTOR CURRENT (mA)
10
1
4
75
℃
25
℃
TA = -25
℃
Cob, CAPACITANCE (pF)
3
2
0.1
1
0.01
VO = 5 V
0
2
4
6
8
10
V in, INPUT VOLTAGE (VOL TS)
0
0
10
20
30
40
50
0.001
V R , REVERSE BIAS VOL TAGE (VOLTS)
Figure 9. Output Capacitance
100
V in, INPUT VOLTAGE (VOL TS)
V O = 0.2 V
Figure 10. Output Current vs. Input Voltage
TA = -25
℃
10
75
℃
25
℃
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 1 1. Input V oltage vs. Output Current
V CE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
MMUN2213
hFE, DC CURRENT GAIN (NORMALIZED)
10
IC/IB = 10
TA = -25
℃
25
℃
1
75
℃
1000
V CE = 10 V
TA = 75
℃
25
℃
-25
℃
100
0.1
0.01
0
20
40
60
80
10
1
10
IC, COLLECTOR CURRENT (mA)
100
IC, COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) vs. I C
Figure 13. DC Current Gain
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