2SK3148
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-748A (Z)
2nd. Edition
February 1999
Features
•
Low on-resistance
R
DS
= 45 mΩ typ.
•
High speed switching
•
4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D
G
1
S
2
1. Gate
2. Drain
3. Source
3
2SK3148
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
100
±20
20
60
20
20
40
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50
Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
100
±20
—
—
1.0
—
—
9
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
45
65
15
840
350
180
15
120
200
150
0.9
90
Max
—
—
±10
10
2.5
60
85
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 20 A, V
GS
= 0
I
F
= 20 A, V
GS
= 0
diF/ dt = 50 A/
µs
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V
Note4
I
D
= 10 A, V
GS
= 4 V
Note4
I
D
= 10 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 10 A, V
GS
= 10 V
R
L
= 3
Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
2
2SK3148
Main Characteristics
Power vs. Temperature Derating
40
500
Maximum Safe Operation Area
Pch (W)
I
D
(A)
100
30
10
3
1
0.3
DC
30
PW
Op
er
Channel Dissipation
Drain Current
=1
0
ion
m
(T
20
at
s(
1s
2
10
10
µs
0µ
1
m
s
s
ho
t)
10
5°
Operation in
C)
this area is
limited by R
DS(on)
c=
0
50
100
150
Tc (°C)
200
0.1
Ta = 25 °C
0.05
0.5 1 2
5 10 20
50 100 200 500
V
DS
(V)
Case Temperature
Drain to Source Voltage
Typical Output Characteristics
20
4V
3.5 V
Pulse Test
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
12
3V
8
I
D
Drain Current
(A)
16
10 V
6V
16
12
Drain Current
8
Tc = 75°C
4
–25°C
25°C
4
V
GS
=2.5 V
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
0
1
2
3
Gate to Source Voltage
4
V
GS
(V)
5
3
2SK3148
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.5
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
Drain to Source Saturation Voltage
V
DS(on
) (V)
Pulse Test
2.0
1.5
Drain to Source On State Resistance
R
DS(on)
( mΩ )
V
GS
= 4 V
10 V
1.0
I
D
= 15 A
0.5
10 A
5A
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
20
10
1
2
5
10
Drain Current
20
50
I
D
(A)
100
Static Drain to Source on State Resistance
R
DS(on)
( mΩ)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
75 °C
5
2
1
0.5
0.1
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
Drain Current I
D
(A)
100
25 °C
150
15 A
100
V
GS
= 4 V
50
10 V
0
–40
5,10 A
15 A
5,10 A
0
40
80
120
160
Case Temperature T
c
(°C)
4
2SK3148
Body–Drain Diode Reverse
Recovery Time
500
10000
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
5000
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
200
100
50
20
10
5
2
1
0.1
Capacitance C (pF)
2000
1000
500
200
100
50
20
10
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Crss
Coss
Ciss
1
3
0.3
Reverse Drain Current
10 30 50
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 15 A
V
DD
= 100 V
50 V
25 V
V
DS
V
GS
V
GS
(V)
200
20
1000
500
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1%
t d(off)
Switching Time t (ns)
160
16
Drain to Source Voltage
120
12
Gate to Source Voltage
200
tf
100
50
tr
20
10
0.1 0.2
t d(on)
2
0.5 1
50 10
Drain Current I
D
(A)
20
80
8
40
V
DD
= 100 V
50 V
25 V
20
40
60
80
Gate Charge Qg (nc)
4
0
100
0
5
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