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SI7463DP-T1

Description
Power Field-Effect Transistor, 11A I(D), 40V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size65KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SI7463DP-T1 Overview

Power Field-Effect Transistor, 11A I(D), 40V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8

SI7463DP-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-XDSO-C5
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.0092 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-C5
JESD-609 codee0
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Si7463DP
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 40
FEATURES
I
D
(A)
- 18.6
- 15
r
DS(on)
(W)
0.0092 @ V
GS
= - 10 V
0.014 @ V
GS
= - 4.5 V
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
APPLICATIONS
D
Automotive
- 12-V Boardnet
- High-Side Switches
- Motor Drives
S
PowerPAK SO-8
6.15 mm
S
1
2
S
3
S
5.15 mm
G
4
D
8
7
D
6
D
5
D
G
D
P-Channel MOSFET
Bottom View
Ordering Information: Si7463DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
- 40
"20
Unit
V
- 18.6
- 15
- 60
- 4.5
5.4
3.4
- 55 to 150
- 11
- 8.9
A
- 1.6
1.9
1.2
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72440
S-31862—Rev. A, 15-Sep-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
_C/W
C/W
1
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