TIL197,TIL198, TIL199
TIL197A, TIL198A, TIL199A
TIL197B, TIL198B, TIL199B
HIGH DENSITY MOUNTING
PHOTODARLINGTON OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 approval pending
Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The TIL197, TIL198, TIL199 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
darlingtons in space efficient dual in line plastic
packages. The standard parts TIL197, TIL198,
TIL199 are tested for a CTR of 500% minimum.
Parts with the suffix A or B are tested for a CTR
of 1000 and 1500% minimum respectively.
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TIL197
TIL197A
TIL197B
2.54
7.0
6.0
1.2
5.08
4.08
Dimensions in mm
1
2
4
3
7.62
4.0
3.0
0.5
13°
Max
0.26
TIL198
TIL198A
TIL198B
3.0
0.5
2.54
7.0
6.0
3.35
1
2
3
4
8
7
6
5
7.62
1.2
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio (500%min)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
10.16
9.16
4.0
3.0
0.5
13°
Max
0.26
1
2
3
4
5
7.0
6.0
6
7
8
16
15
14
13
12
11
10
9
7.62
13°
Max
0.26
3.0
3.35
0.5
TIL199
TIL199A
TIL199B
2.54
7.62
1.2
20.32
19.32
4.0
3.0
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
0.5
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92416m-AAS/A2
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
35V
6V
150mW
MIN TYP MAX UNITS
1.2
5
10
35
6
100
1.4
V
V
µ
A
V
V
nA
TEST CONDITION
I
F
= 20mA
I
R
= 10
µ
A
V
R
= 5V
I
C
= 0.5mA
I
E
= 100
µ
A
V
CE
= 10V
Output
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Coupled
Current Transfer Ratio (CTR) (Note 2
)
TIL197, TIL198, TIL199
TIL197A, TIL198A, TIL199A
TIL197B, TIL198B, TIL199B
500
1000
1500
7500
7500
7500
2mA I
F
, 1V V
CE
2mA I
F
, 1V V
CE
2mA I
F
, 1V V
CE
Collector-emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
0.8
1.0
V
V
RMS
V
PK
Ω
2mA I
F
, 10mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 10V ,
I
C
= 10mA, R
L
= 100
Ω
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time
Output Fall Time
tr
tf
100
100
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92416m-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
=1mA
CE(SAT)
30mA
Collector power dissipation P
C
(mW)
6
5
4
3
2
1
0
50mA
1.5
5mA
200
(V)
Collector-emitter Saturation
Voltage vs. Forward Current
Collector-emitter saturation voltage V
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0
Ic
T
A
= 25°C
0.5
1.0
2.0
2.5
3.0
Forward current I
F
(mA)
Collector Current vs. Collector-emitter Voltage
100
10mA
T
A
= 25°C
50
Forward current I
F
(mA)
Collector current I
C
(mA)
80
60
2mA
40
I
F
= 1mA
20
0
-30
0
25
50
75
100
125
0
1
2
3
4
5
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
40
30
20
10
0
5mA
Collector-emitter voltage V
CE
( V )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Relative current transfer ratio
CE(SAT)
(V)
Collector-emitter saturation voltage V
I
F
= 2mA
I
C
= 10mA
I
F
= 2mA
V
CE
= 1V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
DB92416m-AAS/A2
Embedded System
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