TLP181
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP181
Office Machine
Programmable Controllers
AC Adapter
I/O Interface Board
The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable
for surface mount assembly.
TLP181 consist of a photo transistor optically coupled to a gallium arsenide
infrared emitting diode. Since TLP181 is smaller than DIP package, it’s
suitable for high-density surface mounting applications such as
programmable controllers
•
•
•
•
•
Collector−emitter voltage: 80V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 3750Vrms (min)
Operation Temperature:-55 to 110
˚C
Safety Standards
UL recognized: UL1577, File No. E67349
cUL recognized: CSA Component Acceptance Service No. 5A
File No.E67349
•
BSI approved: BS EN60065:2002, certificate No.8285
BS EN60950-1:2006 certificate No.8286
VDE approved : EN60747-5-2
Maximum Operating Insuration Voltage: 565 Vpk
Highest Permissible Overvoltage: 6000 Vpk
(Note) : When a EN60747-5-2 approved type is needed,
Please designate “Option(V4)”
TOSHIBA
11−4C1
Unit in mm
Weight: 0.09 g (Typ.)
Option (V4) type
Pin Configuration
(top view)
1
3
1: Anode
3: Cathode
4: Emitter
6: Collector
6
4
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2009-11-12
TLP181
Current Transfer Ratio
Current Transfer Ratio (%)
(I
C
/ I
F
)
Type
Classification
*1
I
F
= 5mA, V
CE
= 5V, Ta = 25°C
Min
Blank
Rank Y
Rank GR
Rank BL
TLP181
Rank GB
Rank YH
Rank GRL
Rank GRH
Rank BLL
50
50
100
200
100
75
100
150
200
Max
600
150
300
600
600
150
200
300
400
Blank ,Y,Y
■
,YE,G,G
■
,GR,B, B
■
,BL,GB
YE
GR
BL
GB
Y
■
G
G
■
B
Marking Of Classification
*1: EX, Rank GB: TLP181 (GB)
(Note) Application, type name for certification test, please use standard product type name, i, e.
TLP181 (GB): TLP181
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2009-11-12
TLP181
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current detating
Pulse forward current
(100μs pulse, 100pps)
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
(1 Circuit)
Collector power dissipation
derating (1 Circuit Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta
≥
25°C)
Isolation voltage
(AC, 1min., R.H.
≤
60%)
(Note 1)
LED
Symbol
I
F
ΔI
F
/ °C
I
FP
V
R
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/ °C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/ °C
BV
S
Rating
50
−1.4
(Ta
≥89°C)
1
5
125
80
7
50
150
−1.5
125
−55
to 125
−55
to 110
260 (10s)
200
−2.0
3750
Unit
mA
mA / °C
A
V
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two−terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Symbol
V
CC
I
F
I
C
Min
―
―
―
Typ.
5
16
1
Max
48
20
10
Unit
V
mA
mA
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2009-11-12
TLP181
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V, ( Ambient light
below 1000 lx)
V
CE
= 48 V, Ta = 85°C, ( Ambient
light below 1000 lx)
V = 0, f = 1 MHz
Min
1.0
—
—
80
7
—
—
—
Typ.
1.15
—
30
—
—
0.01
(2)
2
(4)
10
Max
1.3
10
—
—
—
0.1
(10)
50
(50)
—
Unit
V
μA
pF
V
V
μA
μA
pF
Detector
Collector dark current
I
CEO
Capacitance
(collector to emitter)
C
CE
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= 5 mA, V
CE
= 5 V
MIn
50
Rank GB
100
—
30
—
—
—
—
Typ.
—
—
60
—
—
0.2
—
1
Max
600
600
—
—
0.4
—
0.4
10
μA
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
IF = 1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
%
Collector−emitter
saturation voltage
Off−state collector current
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
V
F
= 0.7V, V
CE
= 48 V
I
C (off)
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0V, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
—
1×10
12
Typ.
0.8
10
14
Max
—
—
—
—
—
Unit
pF
Ω
V
rms
V
dc
3750
—
—
—
10000
10000
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2009-11-12
TLP181
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= 16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
Test Condition
Min
—
—
—
—
—
—
—
Typ.
2
3
3
3
2
25
40
Max
—
—
—
—
—
—
—
μs
μs
Unit
Fig. 1
I
F
Switching time test circuit
V
CC
V
CE
I
F
t
S
V
CE
t
ON
4.5V
0.5V
t
OFF
R
L
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2009-11-12
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