NTTD4401F
FETKYtPower MOSFET
and Schottky Diode
FETKY, Micro8t Package
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Rectifier
The FETKY product family incorporates low RDS(on), true logic
level MOSFETs packaged with industry leading, low forward drop,
low leakage Schottky Barrier rectifiers to offer high efficiency
components in a space saving configuration. Independent pinouts for
TMOS and Schottky die allow the flexibility to use a single
component for switching and rectification functions in a wide variety
of applications.
Features
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MOSFET PRODUCT SUMMARY
V
(BR)DSS
−20 V
100 mW @ −2.7 V
−2.7 A
R
DS(on)
Typ
70 mW @ −4.5 V
I
D
Max
−3.3 A
•
Low V
F
and Low Leakage Schottky Rectifier
•
Lower Component Placement and Inventory Costs along with Board
Space Savings
•
Logic Level Gate Drive – Can be Driven by Logic ICs
Applications
SCHOTTKY DIODE SUMMARY
V
R
Max
20 V
I
F
Max
2.0 A
V
F
Typ
58 mV @ I
F
= 2.0 A
A
S
•
•
•
•
Buck Converter
Synchronous Rectification
Low Voltage Motor Control
Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
Rating
Symbol
V
DSS
V
GS
T
A
= 25°C
T
A
= 100°C
Steady
State
T
A
= 25°C
25 C
T
A
= 25°C
T
A
= 100°C
Steady
State
t = 10
ms
T
A
= 25°C
25 C
P
D
I
DM
T
J
, T
STG
EAS
P
D
I
D
I
D
Value
−20
−10
3.3
2.1
1.42
2.4
1.5
0.78
10
−55 to 150
150
W
A
°C
mJ
W
A
Unit
V
V
A
G
D
C
SCHOTTKY DIODE
MOSFET MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissi ation
Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissi ation
Dissipation
(Note 2)
Pulsed Drain
Current
P−Channel MOSFET
8
1
Micro8
CASE 846A
MARKING DIAGRAM
& PIN CONNECTIONS
ANODE
ANODE
SOURCE
GATE
1
2
3
4
(Top View)
Y
= Year
WW = Work Week
BG = Device Code
YWW
BG
8
7
6
5
CATHODE
CATHODE
DRAIN
DRAIN
Operating Junction and Storage
Temperature
Single Pulse Drain−to−Source
Avalanche Energy
Starting T
A
= 25°C (t
v
10 s)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ORDERING INFORMATION
T
L
260
°C
Device
NTTD4401FB2
Package
Micro8
Shipping†
4000/Tape & Reel
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2003
1
October, 2003 − Rev. 0
Publication Order Number:
NTTD4401F/D
NTTD4401F
SCHOTTKY DIODE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Peak Repetitive Reverse Voltage
Average Forward Current (Rated V
R
, T
A
= 100°C)
Peak Repetitive Forward Current (Note 3)
Non−Repetitive Peak Surge Current (Note 4)
Symbol
V
I
O
I
FRM
I
FSM
Value
20
1.0
2.0
20
Unit
V
A
A
A
THERMAL RESISTANCE RATINGS
FET
Rating
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – Steady State (Note 6)
Symbol
R
θJA
R
θJA
88
160
Schottky
Max
135
250
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current (Note 7)
V
(BR)DSS
I
DSS
V
GS
= 0 V
V
GS
= 0 V, V
DS
= −16 V
V
GS
= 0 V, T
J
= 125°C, V
DS
= −16 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
( )
V
GS
= V
DS
, I
D
= −250
mA
−
V
GS
= −4.5 V, I
D
= −3.3 A
V
GS
= −2.7 V, I
D
= −1.2 A
Forward Transconductance
g
FS
V
DS
= −10 V, I
D
= −2.7 A
−0.5
−
−
−
3.5
−
2.5
0.07
0.10
4.2
−1.5
−
0.090
0.130
−
S
V
mV/°C
mW
I
GSS
V
DS
= 0 V, V
GS
=
±10
V
−20
−
−
−
−
−
−
−
−
−1.0
−25
±100
nA
V
mA
Symbol
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller’’ Charge
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
3.
4.
5.
6.
7.
V
SD
t
RR
t
a
t
b
Q
RR
−
V
GS
= 0 V d
ISD
/dt = 100 A/
V,
A/ms,
I
SD
= −3.3 A
V
GS
= 0 V, I
SD
= −2.0 A
−
−
−
−
−
−0.88
37
16
21
0.025
−1.0
50
−
−
0.05
nC
V
ns
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −3.3 A, R
G
= 6.0
W
−
−
−
−
10
35
33
29
20
65
60
55
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
Q
GD
V
GS
= −4.5 V V
DS
= −16 V,
4 5 V,
16 V
I
D
= −3.3 A
V
GS
= 0 V, f = 1.0 MHz,
V
1 0 MH
V
DS
= −16 V
−
−
−
−
−
−
550
200
100
10
1.5
5.0
750
300
175
18
3.0
10
nC
pF
Rated V
R
, square wave, 20 kHz, T
A
= 105°C.
Surge applied at rated load conditions, half−wave, single phase, 60 Hz.
Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
Body diode leakage current.
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2
NTTD4401F
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
Reverse Leakage Current
Symbol
B
V
I
R
Test Condition
I
R
= 1.0 mA
V
R
= 20 V
T
A
= 25°C
T
A
= 125°C
T
A
= 25°C
T
A
= 125°C
T
A
= 25°C
T
A
= 125°C
Min
20
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
10,000
Max
−
0.05
10
0.47
0.39
0.58
0.53
−
V/ms
V
Unit
V
mA
Forward Voltage
V
F
I
F
= 1 0 A
1.0
I
F
= 2 0 A
2.0
Voltage Rate of Change
dV/dt
V
R
= 20 V
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3
NTTD4401F
4
V
GS
= −2.1 V
−I
D,
DRAIN CURRENT (AMPS)
3
V
GS
= −10 V
V
GS
= −4.5 V
V
GS
= −2.5 V
T
J
= 25°C
−I
D,
DRAIN CURRENT (AMPS)
4
5
V
DS
> = −10 V
V
GS
= −1.9 V
3
2
V
GS
= −1.7 V
1
V
GS
= −1.5 V
0
0
2
4
6
8
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
T
J
= 25°C
1
0
1
T
J
= 100°C
1.5
T
J
= 55°C
2
2.5
3
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.2
T
J
= 25°C
0.15
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.12
T
J
= 25°C
0.1
V
GS
= −2.7 V
0.08
V
GS
= −4.5 V
0.06
0.1
0.05
0
2
4
6
8
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
0.04
1
1.5
2
2.5
3
3.5
4
4.5
−I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= −3.3 A
V
GS
= −4.5 V
1000
V
GS
= 0 V
−I
DSS,
LEAKAGE (nA)
100
T
J
= 100°C
10
T
J
= 25°C
1
T
J
= 125°C
1.4
1.2
1
0.8
0.1
0.6
−50
0.01
−25
50
100
125
0
25
75
T
J,
JUNCTION TEMPERATURE (°C)
150
0
4
8
12
16
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTTD4401F
1500
V
DS
= 0 V
C, CAPACITANCE (pF)
1200
C
iss
V
GS
= 0 V
T
J
= 25°C
5
QT
4
20
18
16
14
3
Q1
2
I
D
= −3.3 A
T
J
= 25°C
Q2
V
GS
12
10
8
6
1
0
0
2
4
6
8
10
12
14
Q
g
, TOTAL GATE CHARGE (nC)
V
DS
4
2
0
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
900
C
rss
600
C
iss
300
C
oss
C
rss
0
10
5
0
−V
GS
−V
DS
5
10
15
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
V
DD
= −10 V
I
D
= −1.2 A
V
GS
= −2.7 V
t, TIME (ns)
t, TIME (ns)
100
t
d (off)
t
r
t
f
t
d (on)
10
100
t
r
t
d (off)
t
d (on)
10
1.0
10
R
G,
GATE RESISTANCE (W)
100
t
f
V
DD
= −10 V
I
D
= −3.3 A
V
GS
= −4.5 V
1.0
1.0
10
R
G,
GATE RESISTANCE (W)
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
2
−I
S,
SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
1.6
di/dt
I
S
1.2
t
rr
t
a
t
b
TIME
0.8
t
p
0.4
0
0.4
I
S
0.25 I
S
0.5
0.6
0.7
0.8
0.9
1
Figure 12. Diode Reverse Recovery Waveform
−V
SD,
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage
vs. Current
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