M29W641DU70ZA6E datasheet, PDF

M29W641DU70ZA6E: Description64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory; Categorystorage storage; File Size22KB，1 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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M29W641DU70ZA6E Overview

64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	7 X 11 MM, 0.80 MM PITCH, TFBGA-63
Contacts	63
Reach Compliance Code	compli
ECCN code	3A991.B.1.A
Is Samacsys	N
Maximum access time	70 ns
JESD-30 code	R-PBGA-B63
JESD-609 code	e1
length	11 mm
memory density	67108864 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	63
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
type	NOR TYPE
width	7 mm
Base Number Matches	1

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