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3KP8.0

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size66KB,4 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Download Datasheet View All

3KP8.0 Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

DATA SHEET
3KP5.0~3KP220CA
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
3000 Watt Peak Power VOLTAGE - 5.0 to 220 Volts
P-600
Unit: inch ( mm )
FEATURES
1.0 ( 25.4 ) MIN.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Glass passivated chip junction in P-600 package
• 3000W Peak Pulse Power capability at on 10/1000µs waveform
• Excellent clamping capability
• Low zener impedance
• Repetition rate(Duty Cycle):.05%
.052 ( 1.3 )
.048 ( 1.2 )
.360 ( 9.1 )
• Fast response time: typically less than 1.0 ps from 0 volts to BV min
• Typical IR less than 1µA above 10V
• High temperature soldering guaranteed: 260°C/10 seconds/.375"
,(9.5mm) lead length/5lbs., (2.3kg) tension
.340 ( 8.6 )
MECHANICAL DATA
Case: JEDEC P600 molded plastic
Terminals: Axial leads, solderable per MIL-STD-750, Method 2026
Polarity: Color band denoted cathode except Bipolar
Mounting Position: Any
Weight: 0.07 ounce, 2.1 gram
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 3KP5.0 thru types 3KP220
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
1.0 ( 25.4 ) MIN.
.360 ( 9.1 )
.340 ( 8.6 )
RATING
Peak Power Dissipation at T
A
=25°C, T
P
=1ms(Note 1)
Steady State Power Dissipation at T
L
=75°CLead Lengths .375",(9.5mm)
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed
on Rated Load(JECED Method) (Note 3)
Operating and Storage Temperature Range
SYMBOL
P
PK
PD
VALUE
Minimum Max 3000
8.0
UNITS
Watts
Watts
I
FSM
T
J
, T
STG
250
-55 to +175
Amps
°C
NOTES:
1.Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°Cper Fig. 2.
2.Mounted on Copper Leaf area of 0.79in
2
(20mm
2
).
3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
DATE : DEC.05.2002
PAGE . 1
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