polyfet rf devices
L88016
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F
t
transistors with high
input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
30.0 Watts Push - Pull
Package Style AQ
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
80 Watts
Junction to
Case Thermal
Resistance
o
1.80 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
4.5 A
RF CHARACTERISTICS (
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
14
55
TYP
30.0 WATTS OUTPUT )
MAX
UNITS
dB
%
20:1
TEST CONDITIONS
Idq = 0.40 A, Vds =
28.0
V, F =
Idq = 0.40 A, Vds =
28.0
V, F =
500
MHz
500
MHz
η
VSWR
Relative Idq = 0.40 A, Vds =
28.0
V, F =
500
MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
0.8
0.90
5.50
30.0
1.0
15.0
MIN
65
1.0
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids =
0.10 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.10 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 2.50 A
Vgs = 20V, Vds = 10V
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
L88016
POUT VS PIN GRAPH
L88016 POUT vs PIN F=500 MHZ; IDQ=0.4A; VDS=28V
40
18.00
100
CAPACITANCE VS VOLTAGE
L2B 1 DIE CAPACITANCE
35
16.00
30
Efficiency = 55%
10
Ciss
Coss
25
20
14.00
1
Crss
12.00
15
0.1
0
5
10
15
20
25
30
10
0
0.5
1
1.5
2
2.5
3
3.5
POUT
10.00
4
GAIN
PIN IN WATTS
VDS IN VOLTS
IV CURVE
L2A 1 DICE IV
6
100
ID & GM VS VGS
L2B 1 DIE
ID, GM vs VG
5
4
ID IN AMPS
10
ID
3
2
1
1
GM
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
VDS IN VOLTS
Vg=6v
vg=8v
14
vg=10v
16
18
vg=12v
20
0.1
0
2
4
6
8
10
12
14
Vgs in Volts
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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