Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion)
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Motorola ( NXP ) |
| package instruction | CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | SOURCE AND SUBSTRATE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 27 V |
| Maximum drain current (Abs) (ID) | 0.05 A |
| Maximum drain current (ID) | 0.05 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 0.05 pF |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-206AF |
| JESD-30 code | O-MBCY-W4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DUAL GATE, DEPLETION MODE |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.36 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
京公网安备 11010802033920号
EEWORLD
