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3NH41

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size145KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

3NH41 Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD

3NH41 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationVERY FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current110 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.4 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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