OM6025SA
OM6026SA
POWER MOSFETS IN HERMETIC ISOLATED
JEDEC TO-254AA SIZE 6 DIE
400V, 500V, N-Channel, Up To 24 Amp
Size 6 MOSFETs, High Energy Capability
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Size 6 Die, High Energy
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER
OM6025SA
OM6026SA
V
DS
400
500
R
DS(on)
.23
.30
I
D
(Amp)
24
22
3.1
SCHEMATIC
4 11 R0
3.1 - 93
OM6025SA - OM6026SA
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
DM
P
D
@ T
C
= 25°C
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Pulsed Drain Current
2
Maximum Power Dissipation
Derate Above 25°C Ambient
W
DSS
(1) (2)
Single Pulse Energy
Drain To Source @ 25°C
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/8" from case for 5 secs.)
-55 to 150
275
-55 to 150
275
°C
°C
1000
1200
mJ
OM6025SA OM6026SA
400
400
24
92
165
.025
500
500
22
85
165
.025
Units
V
V
A
A
W
W/°C
Note 1:
V
DD
= 50V, I
D
= as noted
Note 2:
Package Pin Limitation I
D
@ T
C
= 25°C = 25 Amps
THERMAL RESISTANCE
(MAXIMUM) at T
A
= 25°C
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
Derate Above 25°C Case
.76
40
1.32
°C/W
°C/W
W/°C
Free Air Operation
3.1
3.1 - 94
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Typ.
Characteristic
Max.
Unit
OM6026SA
(T
C
= 25° unless otherwise noted)
OM6025SA
Symbol
Min.
Characteristic
OFF CHARACTERISTICS
OFF CHARACTERISTICS
V
(BR)DSS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
(V
DS
= 400 V, V
GS
= 0)
(V
DS
= 400 V, V
GS
= 0, T
J
= 125° C)
nAdc
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSR
V
GS(th)
2.0
1.5
r
DS(on)
V
DS(on)
-
-
g
FS
C
iss
C
oss
C
rss
t
d(on)
(V
DD
= 250 V, I
D
=
24 A,
R
gen
= 4.3 ohms)
(V
DS
= 400 V, I
D
= 24 A,
V
GS
= 10 V)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
(I
S
= 24 A, d/dt = 100 A/µs)
t
on
t
rr
-
14
-
-
-
5.6
5.6
-
mhos
-
-
-
3.0
4.0
3.5
0.23
Ohm
Vdc
-
-
100
I
GSSF
-
-
100
nAdc
-
-
1.0
nAdc
nAdc
-
-
0.25
I
DSS
mAdc
V
(BR)DSS
400
-
-
Vdc
I
DSS
-
-
I
GSSF
I
GSSR
-
-
100
-
-
100
-
1.0
-
0.25
mAdc
500
-
-
Vdc
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
(V
DS
= 500 V, V
GS
= 0)
(V
DS
= 500 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
*
ON CHARACTERISTICS
*
V
GS(th)
Gate-Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mAdc
(T
J
= 125° C)
Ohm
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 12 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 24 A)
(I
D
= 12 A, T
J
= 125° C)
mhos
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 12 Adc)
Vdc
-
-
g
FS
11
-
-
-
8.0
-
8.0
2.0
1.5
r
DS(on)
V
DS(on)
-
-
0.30
-
3.5
3.0
4.0
Vdc
Gate-Threshold Voltage
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 11 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 22 A)
(I
D
= 11 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 11 Adc)
3.1 - 95
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
Output Capacitance
Transfer Capacitance
f = 1.0 MHz)
(V
DS
= 25 V, V
GS
= 0,
C
oss
C
rss
-
200
-
-
680
-
-
5600
-
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
-
-
-
5600
78
230
-
-
-
pF
Output Capacitance
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
t
d(on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
r
T
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
t
on
-
1.1
1.6
ns
1000
Vdc
-
60
-
-
20
-
-
115
140
-
160
-
-
160
-
-
190
-
-
70
-
ns
Turn-On Delay Time
-
-
-
-
-
-
-
70
190
160
160
110
20
55
-
-
-
-
140
-
-
ns
Rise Time
(V
DD
= 250 V, I
D
=
22 A,
Turn-Off Delay Time
R
gen
= 4.3 ohms)
Fall Time
V
GS
= 10 V
Total Gate Charge
(V
DS
= 400 V, I
D
= 22 A,
nC
Gate-Source Charge
V
GS
= 10 V)
Gate-Drain Charge
SOURCE DRAIN DIODE CHARACTERISTICS
**
-
500
SOURCE DRAIN DIODE CHARACTERISTICS
-
1.1
1.6
Vdc
Forward On-Voltage
Forward Turn-On Time
t
rr
(I
S
= 22A, d/dt = 100 A/µs)
Reverse Recovery Time
**
500
1000
ns
OM6025SA - OM6026SA
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
3.1
OM6025SC - OM6026SC
PIN CONNECTION
MECHANICAL OUTLINE
.940
.740
.540
.200
.100
2 PLCS.
.040
.260
MAX
.250
.290
.125 DIA.
2 PLS.
.540
1
2
3
.125
2 PLCS.
.500
MIN.
1.1
1.2
1.3
1.4
1.5
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.150
.300
.040 DIA.
3 PLCS.
.150
M-3S
.144 DIA.
.545
.535
.050
.040
.685
.665
.800
.790
.550
.530
1
2
3
.550
.510
.005
2.1
3.1
2.3
2.4
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.045
.035
.150 TYP.
.260
.249
.150 TYP.
M-PAK
PACKAGE OPTIONS
3.1
3.2
NOTES:
•
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.
•
MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
MOD PAK
Z-TAB
6 PIN SIP
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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