EEWORLDEEWORLDEEWORLD

Part Number

Search

OM6025SA

Description
Power Field-Effect Transistor, 24A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
CategoryDiscrete semiconductor    The transistor   
File Size35KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

OM6025SA Overview

Power Field-Effect Transistor, 24A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

OM6025SA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)1000 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)24 A
Maximum drain current (ID)24 A
Maximum drain-source on-resistance0.23 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)165 W
Maximum pulsed drain current (IDM)92 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
OM6025SA
OM6026SA
POWER MOSFETS IN HERMETIC ISOLATED
JEDEC TO-254AA SIZE 6 DIE
400V, 500V, N-Channel, Up To 24 Amp
Size 6 MOSFETs, High Energy Capability
FEATURES
Isolated Hermetic Metal Package
Size 6 Die, High Energy
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER
OM6025SA
OM6026SA
V
DS
400
500
R
DS(on)
.23
.30
I
D
(Amp)
24
22
3.1
SCHEMATIC
4 11 R0
3.1 - 93

OM6025SA Related Products

OM6025SA OM6026SA
Description Power Field-Effect Transistor, 24A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Power Field-Effect Transistor, 22A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Is it Rohs certified? incompatible incompatible
Reach Compliance Code compliant compliant
Other features HIGH RELIABILITY HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 1000 mJ 1200 mJ
Shell connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 500 V
Maximum drain current (Abs) (ID) 24 A 22 A
Maximum drain current (ID) 24 A 22 A
Maximum drain-source on-resistance 0.23 Ω 0.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA
JESD-30 code S-MSFM-P3 S-MSFM-P3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material METAL METAL
Package shape SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225 225
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 165 W 165 W
Maximum pulsed drain current (IDM) 92 A 85 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
ADC12
I recently discovered a new problem when looking at ADC12, which is the relationship between ADC12IE, channel and storage space. ADC12MCTLx=SREF_1+INCH_y; This sentence can link the storage space and ...
zzbaizhi Microcontroller MCU
Dual color light
...
lorant
I want to ask you a question about the use of a backpack
I received a prize from Fluke in the afternoon, a computer backpack, which I won by playing the game here; [url=https://bbs.eeworld.com.cn/thread-379312-1-2.html]https://bbs.eeworld.com.cn/thread-3793...
wangfuchong Talking
About STM32F051 analog driver HL9576
It's like this, I used HL9576 and used the IO port of STM32F051 to simulate IIC to drive this chip. It turned out that either there was no display or the address felt wrong. SCLK used PB10 and SDA use...
dwlovehome stm32/stm8
【Design Tools】Spartan-3E_FPGA_Chinese Datasheet
Spartan-3E FPGA Family: Introduction and Ordering (Datasheet Module 1) .. 5 Introduction ..................................................................................................................
sdjntl FPGA/CPLD
Share some problems encountered when using CCS
1. Use SEED_XDS510PLUS for CCS simulation Question: When using routine simulation, I couldn't find the 510 option because I was using CCS6.2. Solution: I later searched online and found that XDS510 su...
fish001 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1274  666  2422  2233  1718  26  14  49  45  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号