M29F100T-70N3TR datasheet, PDF

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M29F100T-70N3TR: Description1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory; Categorystorage storage; File Size191KB，30 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M29F100T-70N3TR Overview

1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory

M29F100T-70N3TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	TSOP
package instruction	12 X 20 MM, PLASTIC, TSOP-48
Contacts	48
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum access time	70 ns
Other features	CONFG AS 64K X 16; TOP BOOT BLOCK
Spare memory width	8
startup block	TOP
command user interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G48
JESD-609 code	e0
length	18.4 mm
memory density	1048576 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	1,2,1,1
Number of terminals	48
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	128KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.0001 A
Maximum slew rate	0.02 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	12 mm

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M29F100T

M29F100B

1 Mbit (128Kb x8 or 64Kb x16, Boot Block)

Single Supply Flash Memory

10% SUPPLY VOLTAGE for PROGRAM,

ERASE and READ OPERATIONS

FAST ACCESS TIME: 70ns

FAST PROGRAMMING TIME

– 10

s by Byte / 16

s by Word typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code, M29F100T: 00D0h

– Device Code, M29F100B: 00D1h

DESCRIPTION

The M29F100 is a non-volatile memory that may

be erased electrically at the block or chip level and

programmed in-system on a Byte-by-Byteor Word-

by-Word basis using only a single 5V V

supply.

For Program and Erase operations the necessary

high voltages are generated internally. The device

can also be programmed in standard program-

mers.

The array matrix organisation allows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protected against pro-

graming and erase on programming equipment,

and temporarily unprotected to make changes in

the application. Each block can be programmed

and erased over 100,000 cycles.

July 1998

TSOP48 (N)

12 x 20 mm

SO44 (M)

Figure 1. Logic Diagram

VCC

A0-A15

M29F100T

M29F100B

DQ0-DQ14

DQ15A–1

BYTE

VSS

AI01974

1/30

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