DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK135A
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low C
rss
: 0.02 pF TYP.
• High G
ps
: 18 dB TYP.
• Low NF
: 2.7 dB TYP.
PACKAGE DIMENSIONS
in millimeters
0.4
+0.1
–0.05
2
2.8
+0.2
–0.3
1.5
+0.2
–0.1
–0.06
0.16
+0.1
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSX
V
G1S
*
V
G2S
*
I
D
P
T
T
ch
T
stg
5˚
0 to 0.1
20
±10
±10
25
200
150
–65 to +150
*R
L
≥
10 kΩ
V
V
V
mA
mW
˚
C
˚
C
1
0.6
+0.1
–0.05
5˚
+0.1
5˚ 0.4
–0.05
+0.2
1.1
–0.1
0.8
4
(1.9)
1. Source
2. Drain
3. Gate 2
4. Gate 1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
2.9±0.2
(1.9)
0.95 0.95
5˚
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transter Admittance
SYMBOL
BV
DSX
I
DSS
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
| y
fs
|
14
18
MIN.
20
0.01
6
–2.0
–0.7
±20
±20
TYP.
MAX.
UNIT
V
mA
V
V
nA
nA
ms
TEST CONDITIONS
V
G1S
= V
G2S
= –2 V, I
D
= 10
µ
A
V
DS
= 5 V, V
G2S
= 4 V, V
G1S
= 0
V
DS
= 10 V, V
G2S
= 4 V, I
D
= 10
µ
A
V
DS
= 10 V, V
G1S
= 4 V, I
D
= 10
µ
A
V
DS
= 0, V
G1S
=
±8
V, V
G2S
= 0
V
DS
= 0, V
G2S
=
±8
V, V
G1S
= 0
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 10 mA,
f = 1 kHz
V
DS
= 10 V, V
G2S
= 4 V,
I
D
= 10 mA, f = 1 MHz
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
C
iss
C
oss
C
rss
G
ps
*
NF*
1.5
0.5
1.0
0.02
16
18
2.7
2.5
1.5
0.03
pF
pF
pF
dB
V
DS
= 10 V, V
G2S
= 4 V, I
D
= 10 mA,
f = 900 MHz
4.5
dB
I
DSS
Classification
Class
Marking
I
DSS
L/LS*
U65
0.01 to 2
K/KS*
U66
1 to 6
*
Old specification/New specification
Document No. P10411EJ1V0DS00 (1st edition)
(Previous No. TN-1758)
Date Published August 1995 P
Printed in Japan
3
0.4
+0.1
–0.05
©
1995
3SK135A
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
5
V
G2S
= 4 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
P
T
– Total Power Dissipation – mW
I
D
– Drain Current – mA
400
4
300
3
V
G1S
= 0
200
2
–0.1 V
–0.2 V
–0.3 V
–0.4 V
100
1
0
25
50
75
100
125
0
10
V
DS
– Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
20
T
A
– Ambient Temperature – ˚C
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
V
DS
= 10 V
20
| y
fs
| – Forward Transter Admittance – mS
25
25
V
DS
= 10 V
f = 1 MHz
20
6V
4V
|
D
– Drain Current – mA
15
6V
15
2V
10
4V
2V
10
1V
5
1V
V
G2S
= 0
0
–1.0
0
V
G1S
– Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
DRAIN CURRENT
V
DS
= 10 V
f = 1 MHz
+1.0
5
V
G2S
= 0
0
–1.0
0
V
G1S
– Gate1 to Source Voltage – V
OUTPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
V
DS
= 10 V
f = 1 MHz
2
+1.0
4
3
I
D
= 10 mA at V
G2S
= 4 V
2
I
D
= 5 mA at V
G2S
= 4 V
1
C
oss
– Output Capacitance – pF
C
iss
– Input Capacitance – pF
1
I
D
= 10 mA at V
G2S
= 4 V
I
D
= 5 mA at V
G2S
= 4 V
0
–1.0
0
1.0
2.0
3.0
4.0
0
–1.0
0
1.0
2.0
3.0
4.0
I
D
– Drain Current – mA
V
G2S
– Gate2 to Source Voltage – V
2
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