M29DW324DB70ZE1T datasheet, PDF

M29DW324DB70ZE1T: Description32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory; Categorystorage storage; File Size22KB，1 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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M29DW324DB70ZE1T Overview

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	BGA
package instruction	6 X 8 MM, 0.80 MM PITCH, TFBGA-48
Contacts	48
Reach Compliance Code	compli
ECCN code	3A991.B.1.A
Maximum access time	70 ns
Other features	BOTTOM BOOT BLOCK
Spare memory width	8
startup block	BOTTOM
JESD-30 code	R-PBGA-B48
JESD-609 code	e1
length	8 mm
memory density	33554432 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
type	NOR TYPE
width	6 mm

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