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M29DW323DB90ZE6

Description
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
Categorystorage    storage   
File Size334KB,50 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M29DW323DB90ZE6 Overview

2M X 16 FLASH 3V PROM, 70 ns, PBGA48

M29DW323DB90ZE6 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instruction6 X 8 MM, 0.80 MM PITCH, TFBGA-48
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time90 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length8 mm
memory density33554432 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,63
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width6 mm
M29DW323DT
M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V for Program, Erase
and Read
– V
PP
=12V for Fast Program (optional)
ACCESS TIME: 70ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom
Location)
DUAL OPERATIONS
– Read in one bank while Program or Erase
in other
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB:
225Fh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
6 x 8mm
March 2005
1/50

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