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3SK253

Description
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
File Size35KB,6 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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3SK253 Overview

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK253
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low V
DD
Use
• Driving Battery
:
(V
DS
= 3.5 V)
NF = 1.8 dB TYP. (f = 900 MHz)
G
PS
= 18.0 dB TYP. (f = 900 MHz)
Embossed Type Taping
2.9±0.2
(1.8)
PACKAGE DIMENSIONS
(Unit: mm)
2.8
+0.2
–0.3
1.5
+0.2
–0.1
2
3
0.4
+0.1
– 0.05
4
0.4
+0.1
– 0.05
0.95
• Low Noise Figure :
• High Power Gain :
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting :
• Package
:
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1:
R
L
10 kΩ
*2:
Free air
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
*1
±8
*1
18
18
25
200
*2
125
–55 to +125
V
V
0.85
1
V
V
1.1
+0.2
– 0.1
V
mA
mW
°C
°C
0.8
0 to 0.1
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
Document No. P10583EJ2V0DS00 (2nd edition)
(Previous No. TD-2372)
Date Published August 1995 P
Printed in Japan
©
0.16
+0.1
– 0.06
0.4
+0.1
– 0.05
0.6
+0.1
–0.05
(1.9)
1993
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