3SK318
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
ADE-208-600(Z)
1st. Edition
February 1998
Features
•
Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
•
Excellent cross modulation characteristics
•
Capable low voltage operation; +B= 5V
Outline
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note: Marking is “YB–”.
3SK318
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
6
±6
±6
20
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current I
G1SS
Gate2 to source cutoff current I
G2SS
Gate1 to source cutoff voltage V
G1S(off)
Gate2 to source cutoff voltage V
G2S(off)
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
I
DS(op)
|y
fs
|
C
iss
C
oss
C
rss
PG
NF
—
—
0.5
0.5
0.5
18
1.3
0.9
—
18
—
—
—
0.7
0.7
4
24
1.6
1.2
0.019
21
1.4
±100
±100
1.0
1.0
10
32
1.9
1.5
0.03
—
2.2
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
V
DS
= 3.5V, V
G2S
= 3V
I
D
= 10mA , f = 900MHz
V
G1S
=
±5V,
V
G2S
= V
DS
= 0
V
G2S
=
±5V,
V
G1S
= V
DS
= 0
V
DS
= 5V, V
G2S
= 3V
I
D
= 100µA
V
DS
= 5V, V
G1S
= 3V
I
D
= 100µA
V
DS
= 3.5V, V
G1S
= 1.1V
V
G2S
= 3V
V
DS
= 3.5V, V
G2S
= 3V
I
D
= 10mA , f = 1kHz
V
DS
= 3.5V, V
G2S
= 3V
I
D
= 10mA , f= 1MHz
V
(BR)G2SS
±6
—
—
V
I
G2
=
±10µA,
V
G1S
= V
DS
= 0
V
(BR)G1SS
±6
—
—
V
I
G1
=
±10µA,
V
G2S
= V
DS
= 0
Symbol Min
V
(BR)DSS
6
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 200µA, V
G1S
= V
G2S
= 0
2
3SK318
Maximum Channel Power
Dissipation Curve
Pch (mW)
200
I
D
(mA)
20
Typical Output Characteristics
V
G1S
= 1.7 V
V
G2S
= 3 V
16
1.6 V
1.5 V
150
Channel Power Dissipation
12
1.4 V
1.3 V
1.2 V
100
Drain Current
8
50
4
1.1 V
1.0 V
0.9 V
0.8 V
0
50
100
150
Ta (°C)
200
0
Ambient Temperature
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
Drain Current vs.
Gate1 to Source Voltage
20
I
D
(mA)
V
DS
= 3.5 V
20
2.5 V
2.0 V
I
D
(mA)
16
Drain Current vs.
Gate2 to Source Voltage
V
DS
= 3.5 V
2.0 V
1.6 V
1.8 V
16
12
1.5 V
12
Drain Current
8
Drain Current
1.4 V
8
1.2 V
V
G1S
= 1.0 V
4
V
G2S
= 1.0 V
0
1
2
3
Gate1 to Source Voltage
5
V
G1S
(V)
4
4
0
1
2
3
4
V
G2S
(V)
5
Gate2 to Source Voltage
3
3SK318
Forward Transfer Admittance
vs. Gate1 Voltage
V
DS
= 3.5 V
V
G2S
= 3 V
(dB)
20
Power Gain vs. Drain Current
25
Forward Transfer Admittance |y
fs
| (mS)
30
24
2.5 V
18
Power Gain PG
15
12
2V
1.5 V
1V
10
V
DS
= 3.5 V
V
G2S
= 3 V
f = 900 MHz
5
10
15
Drain Current I
D
20
(mA)
25
6
5
0
0.4
0.8
1.2
1.6
2.0
0
Gate1 to Source Voltage
V
G1S
(V)
Noise Figure vs. Drain Current
5
(dB)
Power Gain PG
V
DS
= 3.5 V
V
G2S
= 3 V
f = 900 MHz
(dB)
25
Power Gain vs. Drain to Source Voltage
4
20
Noise Figure NF
3
15
2
10
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
1
5
0
5
10
15
Drain Current I
D
20
(mA)
25
0
4
3SK318
Noise Figure vs. Drain to Source Voltage
5
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
25
V
DS
= 3.5 V
f = 900MHz
Power Gain vs. Gate2 to Source Voltage
Noise Figure NF (dB)
Power Gain PG (dB)
4
20
3
15
2
10
1
5
0
2
4
6
Drain to Source Voltage
8
10
V
DS
(V)
0
1
2
3
4
5
Gate2 to Source Voltage V
G2S
(V)
5
Noise Figure vs. Gate2 to Source Voltage
V
DS
= 3.5 V
f = 900MHz
Noise Figure NF (dB)
4
3
2
1
0
1
2
3
4
5
Gate2 to Source Voltage V
G2S
(V)
5
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