BCY58-7 datasheet, PDF - EEWORLD Datasheet

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BCY58-7: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 1-Element, NPN, Silicon, TO-18,; CategoryDiscrete semiconductor The transistor; File Size97KB，1 Pages; ManufacturerCDIL[Continental Device India Pvt. Ltd.]

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BCY58-7 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, NPN, Silicon, TO-18,

BCY58-7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	6 pF
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Maximum off time (toff)	800 ns
VCEsat-Max	0.7 V
Base Number Matches	1

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Is it Rohs certified?	incompatible	conform to	conform to	incompatible	conform to	incompatible	conform to	incompatible
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compli
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.1 A	0.2 A	0.2 A
Collector-based maximum capacity	6 pF	4.5 pF	4.5 pF	6 pF	4.5 pF	4.5 pF	4.5 pF	6 pF
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	200	110	60	200	200	110	40
JEDEC-95 code	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.36 W	0.6 W	0.6 W	0.36 W	0.6 W	0.3 W	0.6 W	0.6 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	300 MHz	300 MHz	150 MHz	300 MHz	350 MHz	300 MHz	150 MHz
VCEsat-Max	0.7 V	0.6 V	0.6 V	0.7 V	0.6 V	-	0.6 V	0.7 V
ECCN code	-	EAR99	EAR99	-	EAR99	EAR99	EAR99	-
Collector-emitter maximum voltage	-	45 V	25 V	-	25 V	20 V	25 V	-
Maker	-	-	-	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]

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