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BCY79X

Description
200mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, METAL PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size717KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

BCY79X Overview

200mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, METAL PACKAGE-3

BCY79X Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns
Base Number Matches1
®
BCY79
LOW NOISE AUDIO AMPLIFIER
DESCRIPTION
The BCY79 is a silicon Planar Epitaxial PNP
transistor in Jedec TO-18 metal case. It is
intented for use in audio input stages, driver
stages and low-noise input stages.
The NPN complementary type is BCY59.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at T
amb
25 C
at T
C
25
o
C
Storage Temperature
Max. Operating Junction Temperature
o
Value
-45
-45
-5
-200
-20
390
1
-55 to 175
175
Unit
V
V
V
mA
mA
mW
W
o
o
C
C
1/6
December 2002

BCY79X Related Products

BCY79X BCY79IX BCY79VIII
Description 200mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, METAL PACKAGE-3 200mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, METAL PACKAGE-3 200mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, METAL PACKAGE-3
Is it Rohs certified? conform to incompatible incompatible
Parts packaging code BCY BCY BCY
package instruction CYLINDRICAL, O-MBCY-W3 METAL PACKAGE-3 METAL PACKAGE-3
Contacts 3 3 3
Reach Compliance Code compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 60 45
JEDEC-95 code TO-18 TO-18 TO-18
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e3 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 1 W 0.6 W 0.6 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 180 MHz 180 MHz 180 MHz
Maximum off time (toff) 800 ns 800 ns 800 ns
Maximum opening time (tons) 150 ns 150 ns 150 ns
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