®
BCY79
LOW NOISE AUDIO AMPLIFIER
DESCRIPTION
The BCY79 is a silicon Planar Epitaxial PNP
transistor in Jedec TO-18 metal case. It is
intented for use in audio input stages, driver
stages and low-noise input stages.
The NPN complementary type is BCY59.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at T
amb
≤
25 C
at T
C
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
o
Value
-45
-45
-5
-200
-20
390
1
-55 to 175
175
Unit
V
V
V
mA
mA
mW
W
o
o
C
C
1/6
December 2002
BCY79
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
150
450
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (V
BE
= -2 V)
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
Test Conditions
V
CE
= -35 V
V
CE
= -35 V
V
CE
= -45 V
V
EB
= -4 V
I
C
= -10
µA
-45
T
C
= 150 C
T
C
= 100
o
C
o
Min.
Typ.
-2
Max.
-20
-100
-10
-20
-20
Unit
nA
nA
µA
µA
nA
V
I
CEX
I
EBO
V
(BR)CES
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter (On)
Voltage
I
C
= -2 mA
-45
V
I
E
= -1
µA
-5
V
V
CE(sat)
∗
V
BE(sat)
∗
V
BE(ON)
∗
I
C
= -10 mA
I
C
= -100 mA
I
C
= -10 mA
I
C
= -100 mA
I
C
I
C
I
C
I
C
=
=
=
=
-10
µA
-2 mA
-10 mA
-100 mA
I
B
= -0.25 mA
I
B
= -2.5 mA
I
B
= -0.25 mA
I
B
= -2.5 mA
V
CE
= -5 V
V
CE
= -5 V
V
CE
= -1 V
V
CE
= -1 V
V
CE
= -5 V
30
40
100
V
CE
= -5 V
180
250
380
V
CE
= -1 V
120
160
240
V
CE
= -1 V
45
60
60
175
250
350
V
CE
= -5 V f = 100 MHz
-0.6
-0.7
-0.6
-0.12
-0.4
-0.7
-0.85
-0.55
-0.65
-0.68
-0.75
200
270
340
250
350
500
260
360
500
-0.25
-0.8
-0.85
-1.2
-0.75
V
V
V
V
V
V
V
V
h
FE
∗
DC Current Gain
I
C
= -10
µA
Gr. VIII
Gr. IX
Gr. X
I
C
= -2 mA
Gr. VIII
Gr. IX
Gr. X
I
C
= -10 mA
Gr. VIII
Gr. IX
Gr. X
I
C
= -100 mA
Gr. VIII
Gr. IX
Gr. X
I
C
= -2 mA
Gr. VIII
Gr. IX
Gr. X
I
C
= -10 mA
310
460
630
400
630
1000
h
fe
∗
Small Signal Current
Gain
V
CE
= -5 V f = 1 KHz
260
330
520
180
350
500
700
MHz
f
T
Transition Frequency
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
1 %
2/6
BCY79
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Normalized h Parameters
Noise Figure vs. Frequency
Noise Figure (f = 1 KHz)
4/6
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