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BD177-10

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size124KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

BD177-10 Overview

Transistor

BD177-10 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD175 BD177 BD179
DESCRIPTION
・With
TO-126 package
・Complement
to type BD176/178 /180
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
固电
导½
PARAMETER
CONDITIONS
BD175
V
CBO
Collector-base voltage
V
CEO
HA
INC
Emitter -base voltage
Collector current (DC)
ES
NG
BD177
BD179
BD175
BD177
BD179
Open emitter
MIC
E
OR
UCT
ND
O
VALUE
45
60
80
45
60
80
UNIT
V
Collector-emitter voltage
Open base
V
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Open collector
5
3
7
V
A
A
W
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
30
150
-65~150

BD177-10 Related Products

BD177-10 BD177-6 BD179-6 BD179-10 BD175-16 BD175-6 BD175-10
Description Transistor Transistor Transistor Transistor Transistor Transistor Transistor
package instruction , , , FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
Maker - - - Inchange Semiconductor Inchange Semiconductor Inchange Semiconductor Inchange Semiconductor
Shell connection - - - COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) - - - 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage - - - 80 V 45 V 45 V 45 V
Configuration - - - SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - - - 63 100 40 63
JEDEC-95 code - - - TO-126 TO-126 TO-126 TO-126
JESD-30 code - - - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components - - - 1 1 1 1
Number of terminals - - - 3 3 3 3
Maximum operating temperature - - - 150 °C 150 °C 150 °C 150 °C
Package body material - - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type - - - NPN NPN NPN NPN
Maximum power dissipation(Abs) - - - 30 W 30 W 30 W 30 W
surface mount - - - NO NO NO NO
Terminal form - - - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - - - SINGLE SINGLE SINGLE SINGLE
transistor applications - - - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - - - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - - - 3 MHz 3 MHz 3 MHz 3 MHz
VCEsat-Max - - - 0.8 V 0.8 V 0.8 V 0.8 V
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