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BD314

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size198KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BD314 Overview

Transistor

BD314 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BD314
DESCRIPTION
·Excellent
Safe Operating Area
·DC
Current Gain-h
FE
= 25(Min.)@I
C
= -4A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= -1.0 V(Max)@ I
C
= -5A
·Complement
to Type BD313
APPLICATIONS
·Designed
for high quality amplifiers operating up to 60 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
-80
UNIT
V
-80
-5
V
V
-10
A
-20
-4
115
200
-65~200
A
A
W
P
C
T
J
T
stg
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.52
UNIT
℃/W
isc Website:www.iscsemi.cn
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