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MTB15N06E

Description
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size670KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MTB15N06E Overview

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),TO-263AB

MTB15N06E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSingle
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

MTB15N06E Related Products

MTB15N06E
Description TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),TO-263AB
Is it Rohs certified? incompatible
package instruction SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
Shell connection DRAIN
Configuration Single
Minimum drain-source breakdown voltage 60 V
Maximum drain current (Abs) (ID) 15 A
Maximum drain current (ID) 15 A
Maximum drain-source on-resistance 0.12 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2
JESD-609 code e0
Number of components 1
Number of terminals 2
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 75 W
Certification status Not Qualified
surface mount YES
Terminal surface Tin/Lead (Sn/Pb)
Terminal form GULL WING
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
Transistor component materials SILICON
Base Number Matches 1
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