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BAS28BKLEADFREE

Description
Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size33KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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BAS28BKLEADFREE Overview

Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon,

BAS28BKLEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current4 A
Number of components2
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage85 V
Maximum reverse current1 µA
Maximum reverse recovery time0.006 µs
Reverse test voltage75 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1

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Description Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon, Rectifier Diode, 2 Element, 0.25A, 85V V(RRM), Silicon,
Is it lead-free? Lead free Lead free Contains lead Lead free Contains lead Contains lead
Is it Rohs certified? conform to conform to incompatible conform to incompatible incompatible
Reach Compliance Code compliant compliant not_compliant compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V 1.25 V 1.25 V 1.25 V 1.25 V
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3 e0 e3 e0 e0
Maximum non-repetitive peak forward current 4 A 4 A 4 A 4 A 4 A 4 A
Number of components 2 2 2 2 2 2
Number of terminals 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 0.25 A 0.25 A 0.25 A 0.25 A 0.25 A 0.25 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED 260 NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 85 V 85 V 85 V 85 V 85 V 85 V
Maximum reverse current 1 µA 1 µA 1 µA 1 µA 1 µA 1 µA
Maximum reverse recovery time 0.006 µs 0.006 µs 0.006 µs 0.006 µs 0.006 µs 0.006 µs
surface mount YES YES YES YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) MATTE TIN (315) TIN LEAD Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 NOT SPECIFIED 10 NOT SPECIFIED NOT SPECIFIED
Reverse test voltage 75 V 75 V 75 V - - 75 V
Maker - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
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