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D440S18

Description
Rectifier Diode, 1 Phase, 1 Element, 470A, 1800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size78KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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D440S18 Overview

Rectifier Diode, 1 Phase, 1 Element, 470A, 1800V V(RRM), Silicon,

D440S18 Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 440 S 16...20
T
vj
= - 40°C...T
vj max
S
Elektrische Eigenschften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak forward reverse voltage
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS forward current
Dauergrenzstrom
mean forward current
Stoßstrom-Grenzwert
surge foward current
Grenzlastintegral
I²t-value
T
C
=100°C
T
C
=95°C
T
vj
= 25°C, tp = 10 ms
T
vj
= T
vj max
, tp = 10 ms
T
vj
= 25°C, tp = 10ms
T
vj
= T
vj max
, tp = 10ms
V
RRM
1600
1800
2000
1700
1900
2100
740
440
470
6400
5300
205000
140500
V
V
V
V
V
V
A
A
A
A
A
A²s
A²s
T
vj
= + 25°C...T
vj max
V
RSM
I
FRMSM
I
FAVM
I
FSM
I²t
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovered time
Sanftheit
Softness
T
vj
= T
vj max
, i
F
= 1400 A
v
F
V
(TO)
r
T
V
FRM
max.
2,3
1,14
0,725
53
V
V
mΩ
V
1)
T
vj
= T
vj max
T
vj
= T
vj max
IEC 747-2
T
vj
= T
vj max
di
F
/dt=500A/µs, v
R
=0V
IEC 747-2, Methode / method II
T
vj
= T
vj max,
i
FM
=di
F
/dt*t
fr
di
F
/dt=500A/µs, v
R
=0V
T
vj
= 25°C,
v
R
=V
RRM
t
fr
1,9
µs
1)
i
R
I
RM
T
vj
= T
vj max
, v
R
= V
RRM
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=760A,-di
F
/dt=500A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=760A,-di
F
/dt=500A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=760A,-di
F
/dt=500A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
T
vj
= T
vj max
i
FM
=760A,-di
F
/dt=500A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
max.
max.
10
150
720
mA
mA
A
1)
Q
r
1130
µAs
1)
t
rr
2,8
µs
1)
SR
0,0012
µs/A
2)
1) Richtwert für obere Streubereichsgrenze / Upper limit of scatter range (standard value)
2) Richtwert für untere Streubereichsgrenze / Lower limit of scatter range (standard value)
SZ-M / 18.05.95 , R.Jörke
A 113/95
Seite/page 1

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Description Rectifier Diode, 1 Phase, 1 Element, 470A, 1800V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 470A, 2000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 470A, 1600V V(RRM), Silicon,
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Base Number Matches 1 1 1
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