EEWORLDEEWORLDEEWORLD

Part Number

Search

NDC7002ND87Z

Description
Small Signal Field-Effect Transistor, 0.51A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size258KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NDC7002ND87Z Overview

Small Signal Field-Effect Transistor, 0.51A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

NDC7002ND87Z Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.51 A
Maximum drain-source on-resistance2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
March 1996
NDC7002N
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been designed to minimize
on-state resistance, provide rugged and reliable
performance and fast switching. These devices is
particularly suited for low voltage applications requiring a
low current high side switch.
Features
0.51A, 50V, R
DS(ON)
= 2
@ V
GS
=10V
High density cell design for low R
DS(ON)
.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High saturation current.
____________________________________________________________________________________________
4
3
5
2
6
SOT-6 (SuperSOT
TM
-6)
1
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
NDC7002N
50
20
0.51
1.5
0.96
0.9
0.7
-55 to 150
Units
V
V
A
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDC7002N.SAM

NDC7002ND87Z Related Products

NDC7002ND87Z
Description Small Signal Field-Effect Transistor, 0.51A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code compliant
ECCN code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V
Maximum drain current (ID) 0.51 A
Maximum drain-source on-resistance 2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G6
Number of components 2
Number of terminals 6
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
Problems with Bluetooth Low Energy modules
I am now making a remote control that uses a Bluetooth low energy module. I found a low-power Bluetooth module, DX-BT19-S.When connected, it is 8.5mA, when not connected, it is 400-700uA. This low pow...
chenbingjy Wireless Connectivity
Understanding of feedback and operational amplifiers in circuits
Feedback: It can be described as sending part or all of the output (voltage or current) of the amplifier circuit back to the input of the amplifier circuit in a certain way. We sometimes call the ampl...
Jacktang Analogue and Mixed Signal
Microcontroller and microprocessor market continues to grow
The expansion of consumer demand and technological advancement in the industrial field continue to drive the rapid growth of the microcontroller and microprocessor market. The key factor causing its e...
朗锐智科 Robotics Development
What is the maximum power that TPS2491 can control?
What is the maximum power that the TPS2491 can control?What is the maximum power that the TPS2491 can control? TPS2491 uses an external MOSFET. Question: Can TPS2491 stably control an application with...
xujian2000 Analogue and Mixed Signal
Wi-Fi 6's 160Hz debate: What is 160MHz?
Today, 160MHz is the maximum bandwidth of Wi-Fi, which directly affects the maximum speed of Wi-Fi transmission. What is 160MHz? In the era of Wi-Fi 4 (802.11n), the maximum bandwidth was 40MHz, and t...
Jacktang RF/Wirelessly
Can any expert help me? About tinyxml problem
The problem is in the commented part of the code //Set the content of the name element and connect it. TiXmlText *NameContent = new TiXmlText(str1); I always feel that there is a problem with str1. Is...
chyzh Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2816  1617  1255  2651  1068  57  33  26  54  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号