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M114TGN

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size269KB,2 Pages
ManufacturerMtronPTI
Websitehttp://www.mtronpti.com
Download Datasheet Parametric View All

M114TGN Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC

M114TGN Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time2.5 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A
M1 Series
5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator
DENOTES PIN 1
NOTE:
A capacitor of value 0.01
mF
or greater between Vdd and Ground
is recommended.
Pin Connections
MtronPTI reserves the right to make changes to the product(s) and service(s) described herein without notice. No liability is assumed as a result of their use or application.
Please see
www.mtronpti.com
for our complete offering and detailed datasheets. Contact us for your application specific requirements: MtronPTI
1-800-762-8800.
Revision: 03-13-07
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