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300HFR120M

Description
300 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB
CategoryDiscrete semiconductor    diode   
File Size54KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

300HFR120M Overview

300 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB

300HFR120M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeDO-9
package instructionO-MUPM-H1
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH SURGE CAPABILITY
applicationGENERAL PURPOSE
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.38 V
JEDEC-95 codeDO-205AB
JESD-30 codeO-MUPM-H1
Maximum non-repetitive peak forward current5200 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature180 °C
Maximum output current300 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Base Number Matches1
Bulletin I2021/A
300HF(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
High current carrying capability
High surge current capability
Types up to 1200V V
RRM
Stud cathode and stud anode version
Standard JEDEC types
Diffused junction
300A
Typical Applications
Battery chargers
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
300HF(R)
300
125
470
5000
5200
125
113
400 to 1200
-40 to 180
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
°C
case style
DO-205AB (DO-9)
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