ON Semiconductort
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC182
50
60
6.0
100
350
2.8
1.0
8.0
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
BC182
BC182A
BC182B
1
mW
mW/°C
Watts
mW/°C
°C
2
3
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
357
125
Unit
°C/W
°C/W
2
BASE
COLLECTOR
1
3
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 100
mA,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 50 V, V
BE
= 0)
Emitter–Base Leakage Current
(V
EB
= 4.0 V, I
C
= 0)
V
(BR)CEO
50
V
(BR)CBO
60
V
(BR)EBO
I
CBO
—
I
EBO
—
0.2
—
15
15
nA
6.0
—
—
—
—
V
nA
—
—
V
V
©
Semiconductor Components Industries, LLC, 2001
190
May, 2001 – Rev. 2
Publication Order Number:
BC182/D
BC182
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
µA,
V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
h
FE
BC182
BC182
BC182A
BC182B
BC182
V
CE(sat)
—
—
V
BE(sat)
V
BE(on)
—
0.55
—
0.5
0.62
0.83
—
0.7
—
—
0.07
0.2
—
0.25
0.6
1.2
V
V
40
120
120
180
80
—
—
—
—
500
220
500
—
V
—
(I
C
= 100 mA, V
CE
= 5.0 V)
Collector–Emitter On Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
(1)
Base–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
(1)
Base–Emitter On Voltage
(I
C
= 100
µA,
V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
(1)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 0.5 mA, V
CE
= 3.0 V, f = 100 MHz)
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
Common Base Output Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
Common Base Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V, f = 1.0 kHz)
BC182
BC182A
BC182B
NF
—
2.0
10
C
ob
C
ib
h
fe
125
125
240
—
—
—
500
260
500
dB
f
T
—
150
—
—
100
200
—
8.0
—
—
5.0
—
pF
pF
—
MHz
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2.0 kΩ, f = 1.0 kHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
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191
BC182
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
Figure 1. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 5. “Saturation” and “On” Voltages
400
300
C, CAPACITANCE (pF)
200
10
7.0
5.0
C
ib
T
A
= 25°C
100
80
60
40
30
20
0.5 0.7
1.0
V
CE
= 10 V
T
A
= 25°C
3.0
2.0
C
ob
f T, CURRENT-GAIN
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
1.0
0.4
0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
Figure 6. Current–Gain — Bandwidth Product
Figure 7. Capacitances
r b, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120
0.1
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25°C
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mAdc)
5.0
10
Figure 8. Base Spreading Resistance
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192
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