PDM4M4030
64K x 32 CMOS
Static RAM Module
Features:
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High-density 2 megabit Static RAM module
Low profile 64-pin ZIP (Zig-zag In-line vertical
Package), 64-pin SIMM or Angled SIMM (Single
In-line Memory Module)
Ultra fast access time: 10 ns (max.)
Surface mounted plastic components on an epoxy
laminate (FR-4) substrate
Single 5V (
±
10%) power supply
Multiple V
SS
pins and decoupling capacitors for
maximum noise immunity
Inputs/outputs directly TTL compatible
The PDM4M4030 is packaged in a 64-pin FR-4 ZIP
(Zig-zag In-line vertical Package), a 64-pin SIMM or
Angled SIMM (Single In-line Memory Module). The
ZIP configuration allows 64 pins to be placed on a
package 3.65” long and 0.35” wide. At only 0.650”
high, this low-profile package is ideal for systems
with minimum board spacing. The SIMM configura-
tion allows use of edge mounted sockets to secure the
module.
All inputs and outputs of the PDM4M4030 are TTL
compatible and operate from a single 5V supply. Full
asynchronous circuitry requires no clock or refresh for
operation and provides equal access and cycle times
for ease of use.
Two identification pins (PD0 and PD1) are provided
for applications in which different density versions of
the module are used. In this way, the target system
can read the respective levels of PD0 and PD1 to
determine a 64K depth.
Description:
The PDM4M4030 is a 64K x 32 static RAM module
constructed on an epoxy laminate (FR-4) substrate
using eight 64K x 4 static RAMs in plastic SOJ
packages. Availability of four chip select lines (one
for each of two RAMs) provides byte access.
Extremely fast speeds can be achieved due to the use
of 256K Static RAMs fabricated in Paradigm’s high-
performance, high-reliability CMOS technology. The
PDM4M4030 is available with access times as fast as
10 ns with minimal power consumption.
Functional Block Diagram
CS
1
ADDRESS
16
CS
2
CS
3
CS
4
2
PD
9
10
11
WE
OE
8
8
64K x 32
RAM
8
8
I/O31-I/O0
12
8-25
Rev 2.2 - 7/17/97
PDM4M4030
Truth Table
Mode
Deselect/
Power-down
Read
Write
Deselect
CS
OE
WE
Output
High-Z
DATA
OUT
DATA
IN
High-Z
Power
Standby
Active
Active
Active
1
2
3
H
L
L
L
X
L
X
H
X
H
L
H
Absolute Maximum Ratings
(1)
Symbol
V
TERM
T
BIAS
T
STG
T
A
P
T
I
OUT
Rating
Terminal Voltage with Respect to V
SS
Temperature Under Bias
Storage Temperature
Operating Temperature
Power Dissipation
DC Output Current
Com’l.
–0.5 to +7.0
–10 to +85
–55 to +125
0 to +70
1.0
50
Ind.
–0.5 to +7.0
–10 to +85
–65 to +150
0 to +70
1.0
50
Unit
V
°
C
°
C
°
C
W
mA
4
5
6
7
8
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Recommended DC Operating Conditions
Symbol
V
CC
V
SS
Commercial
Parameter
Supply Voltage
Supply Voltage
Ambient Temperature
Min.
4.75
0
0
Typ.
5.0
0
25
Max.
5.25
0
70
Unit
V
V
°
C
9
10
11
12
Rev 2.2 - 7/17/97
8-27
PDM4M4030
DC Electrical Characteristics
(V
CC
= 5.0V
±
5%, T
A
= 0
°
C to 70
°
C)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
LI
I
LI
I
LO
V
OL
V
OH
V
IH
(2)
V
IL
NOTE
Input Leakage Current
(Address)
Input Leakage Current
(Data)
Output Leakage Current
Output Low Voltage
Output High Voltage
Input High Voltage
Input Low Voltage
V
CC
= Max.,V
IN
= V
SS
to V
CC
V
CC
= Max., V
IN
= V
SS
to V
CC
V
OUT
= V
SS
to V
CC
, V
CC
= Max.,
CS
= V
IH
I
OL
= 8 mA, V
CC
= Min.
I
OL
= –4 mA, V
CC
= Min.
—
—
—
—
2.4
2.2
–0.5
(1)
80
10
10
0.4
—
6.0
0.8
µ
A
µ
A
µ
A
V
V
V
V
1. V
IL
= –1.5V for pulse widths less than 10 ns, once per cycle.
2. I/O pins must not exceed V
CC
+ 0.5V.
Power Supply Characteristics
10 ns - 15 ns
(1)
Max
20 ns - 25 ns
(1)
Max
Unit
Symbol
Parameter
I
CC
I
SB
I
SB1
CS
Operating Current
= V
IL
, V
CC
= Max., f = f
MAX
, Outputs Open
1280
320
240
1280
320
240
mA
mA
mA
Standby Current
CS
≥
V
IH
, V
CC
= Max., f = f
MAX
, Outputs Open
Full Standby Current
CS
≥
V
CC
– 0.2V,
f = 0, V
IN
> V
CC
– 0.2V or < 0.2V
1. Preliminary specification only.
NOTE
Capacitance
(1)
(T
A
= +25
°
C, f = 1.0 MHz)
Symbol
Parameter
Max.
Unit
C
IN(D)
C
IN(A)
C
OUT
NOTE
Input Capacitance, (Data) V
IN
= 0V
Input Capacitance, (Address and Control) V
IN
= 0V
Output Capacitance, V
OUT
= 0V
15
70
15
pF
pF
pF
1. This parameter is determined by device characteristics but is not production tested.
8-28
Rev 2.2 - 7/17/97
Test/Measurement
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