IRL8113LPBF datasheet, PDF - EEWORLD Datasheet

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IRL8113LPBF: Description42 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size278KB，13 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRL8113LPBF Overview

42 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRL8113LPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-262AA
package instruction	LEAD FREE, PLASTIC, TO-262, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	220 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	105 A
Maximum drain current (ID)	42 A
Maximum drain-source on-resistance	0.006 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	110 W
Maximum pulsed drain current (IDM)	420 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 95582

Applications

High Frequency Synchronous Buck

Converters for Computer Processor Power

Lead-Free

HEXFET

Power MOSFET

IRL8113PbF

IRL8113SPbF

IRL8113LPbF

DSS

DS(on)

max Qg (Typ.)

30V

6.0m

23nC

Benefits

Low R

DS(on)

at 4.5V V

Low Gate Charge

Fully Characterized Avalanche Voltage

and Current

TO-220AB

IRL8113

Pak

IRL8113S

TO-262

IRL8113L

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

= 100°C

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Max.

105

Units

420

110

± 20

Maximum Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

0.76

-55 to + 175

W/°C

°C

300 (1.6mm from case)

10 lbf in (1.1N m)

Thermal Resistance

Parameter

θJC

θCS

θJA

Junction-to-Case

Typ.

Max.

1.32

–––

Units

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

0.50

–––

Junction-to-Ambient (PCB Mount)

Notes

through

are on page 12

www.irf.com

07/20/04

IRL8113LPBF Related Products

	IRL8113LPBF	IRL8113PBF	IRL8113SPBF
Description	42 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	42 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	42 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it Rohs certified?	conform to	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	LEAD FREE, PLASTIC, TO-262, 3 PIN	LEAD FREE PACKAGE-3	LEAD FREE, PLASTIC, D2PAK-3
Contacts	3	3	3
Reach Compliance Code	_compli	unknow	_compli
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	220 mJ	220 mJ	220 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V
Maximum drain current (Abs) (ID)	105 A	105 A	105 A
Maximum drain current (ID)	42 A	42 A	42 A
Maximum drain-source on-resistance	0.006 Ω	0.006 Ω	0.006 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSFM-T3	R-PSSO-G2
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	250	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	110 W	110 W	110 W
Maximum pulsed drain current (IDM)	420 A	420 A	420 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Parts packaging code	TO-262AA	TO-220AB	-
JEDEC-95 code	TO-262AA	TO-220AB	-
Humidity sensitivity level	1	-	1
Is it lead-free?	-	Lead free	Lead free

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