BLF369
Multi-use VHF power LDMOS transistor
Rev. 03 — 29 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave
applications in the HF/VHF band up to 500 MHz.
Table 1.
Typical performance
Typical RF performance at V
DS
= 32 V and T
h
= 25
°
C in a common-source 225 MHz test circuit.
[1]
Mode of operation
CW, class AB
2-tone, class AB
pulsed, class AB
[2]
[1]
[2]
t
p
= 2 ms;
δ
= 10 %.
f
(MHz)
225
f
1
= 225; f
2
= 225.1
225
P
L
(W)
500
-
500
P
L(PEP)
(W)
-
500
-
G
p
(dB)
18
19
19
η
D
(%)
60
47
55
IMD3
(dBc)
-
−28
-
T
h
is the heatsink temperature.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical pulsed performance at 225 MHz, a drain-source voltage V
DS
of 32 V and a
quiescent drain current I
Dq
= 2
×
1.0 A:
N
Load power P
L
= 500 W
N
Power gain G
p
= 19 dB
N
Drain efficiency
η
D
= 55 %
I
Advanced flange material for optimum thermal behavior and reliability
I
Excellent ruggedness
I
High power gain
I
Designed for broadband operation (HF/VHF band)
I
Source on underside eliminates DC isolators, reducing common-mode inductance
I
Easy power control
I
Integrated ESD protection
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS), using exemption No. 7 of the annex
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
1.3 Applications
I
Pulsed applications up to 500 MHz
I
Communication transmitter applications in the HF/VHF/UHF band under specific
conditions
I
Industrial applications up to 500 MHz under special conditions
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
1
2
Symbol
1
5
3
5
4
3
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF369
-
Description
Version
flanged LDMOST ceramic package; 2 mounting holes; SOT800-2
4 leads
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
−0.5
−65
-
Max
65
+13
+150
200
Unit
V
V
°C
°C
BLF369_3
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 03 — 29 January 2008
2 of 17
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
R
th(j-h)
Z
th(j-h)
Thermal characteristics
Parameter
thermal resistance from
junction to case
thermal resistance from
junction to heatsink
transient thermal impedance
from junction to heatsink
Conditions
T
j
= 200
°C
T
j
= 200
°C
T
j
= 200
°C
t
p
= 100
µs; δ
= 10 %
t
p
= 1 ms;
δ
= 10 %
t
p
= 2 ms;
δ
= 10 %
t
p
= 3 ms;
δ
= 10 %
t
p
= 1 ms;
δ
= 20 %
[1]
[2]
[3]
[4]
T
j
is the junction temperature.
R
th(j-case)
and R
th(j-h)
are measured under RF conditions.
R
th(j-h)
is dependent on the applied thermal compound and clamping/mounting of the device.
See
Figure 1.
[4]
[4]
[4]
[4]
[4]
[1][2]
Typ
0.26
0.35
Unit
K/W
K/W
[1][2][3]
0.063 K/W
0.117 K/W
0.133 K/W
0.142 K/W
0.140 K/W
0.4
Z
th(j-h)
(K/W)
0.3
(7)
001aah494
0.2
(6)
(3)
(2)
(1)
(5)
(4)
0.1
0
10
−7
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1)
δ
= 1 %
(2)
δ
= 2 %
(3)
δ
= 5 %
(4)
δ
= 10 %
(5)
δ
= 20 %
(6)
δ
= 50 %
(7)
δ
= 100 % (DC)
Fig 1. Transient thermal impedance from junction to heatsink as function of pulse duration
BLF369_3
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 03 — 29 January 2008
3 of 17
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
iss
C
oss
C
rss
[1]
[2]
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
Conditions
V
GS
= 0 V; I
D
= 6 mA
V
DS
= 20 V; I
D
= 600 mA
V
GS
= 0 V; V
DS
= 32 V
V
GS
= V
GS(th)
+ 9 V; V
DS
= 10 V
V
GS
= 20 V; V
DS
= 0 V
V
GS
= 20 V; I
D
= 13 A
V
GS
= V
GS(th)
+ 9 V; I
D
= 13 A
V
GS
= 0 V; V
DS
= 32 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 32 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 32 V; f = 1 MHz
[1]
[1]
[2]
[2]
[1]
[1]
Min
65
4
-
-
-
-
-
-
-
-
Typ
-
-
-
100
-
15
40
400
230
15
Max
-
5.5
4.2
-
60
-
-
-
-
-
Unit
V
V
µA
A
nA
S
mΩ
pF
pF
pF
I
D
is the drain current.
C
iss
and C
oss
include reverse transfer capacitance (C
rss
).
600
C
oss
(pF)
400
001aae484
200
0
0
10
20
30
40
50
V
DS
(V)
V
GS
= 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section
BLF369_3
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 03 — 29 January 2008
4 of 17
NXP Semiconductors
BLF369
Multi-use VHF power LDMOS transistor
7. Application information
Table 7.
RF performance in a common-source 225 MHz test circuit
T
h
= 25
°
C unless otherwise specified.
Mode of operation
CW, class AB
2-tone, class AB
pulsed, class AB
[1]
[1]
t
p
= 2 ms;
δ
= 10 %.
f
(MHz)
225
f
1
= 225; f
2
= 225.1
225
V
DS
(V)
32
32
-
I
Dq
(A)
P
L
(W)
P
L(PEP)
G
p
(W)
-
500
-
(dB)
> 17
> 18
> 18
η
D
(%)
> 55
> 43
> 50
IMD3
(dBc)
-
<
−24
-
∆G
p
(dB)
-
1
-
2
×
1.0 500
2
×
1.0 -
-
500
7.1 CW
22
G
P
(dB)
20
η
D
001aae501
70
η
D
(%)
50
G
P
18
30
16
0
100
200
300
10
400
500
P
L
(W)
Fig 3. CW power gain and drain efficiency as a function of output power; typical values
BLF369_3
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 03 — 29 January 2008
5 of 17
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