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BY299-GT3

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size149KB,3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

BY299-GT3 Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

BY299-GT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PALF-W2
Reach Compliance Codeunknown
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1






 



  







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0.034(0.9)
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