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30SLJQ045

Description
30 A, 45 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size79KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

30SLJQ045 Overview

30 A, 45 V, SILICON, RECTIFIER DIODE

30SLJQ045 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionR-CBCC-N3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-CBCC-N3
Maximum non-repetitive peak forward current270 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current30 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
PD - 93949A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
30SLJQ045
30 Amp, 45V
Major Ratings and Characteristics
Description/Features
The 30SLJQ045 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-0.5 ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for typical
high frequency switching power supplies and resonent
power converters. Full
MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
Characteristics
I
F(AV)
V
RRM
I
FSM
@ tp = 8.3ms half-sine
V
F
@ 30Apk, T
J
=125°C
30SLJQ045 Units
30
A
45
270
0.71
V
A
V
T
J
, T
stg
Operating and storage
-55 to 150
°C
CASE STYLE
CATHODE ANODE ANODE
IR Case Style SMD-0.5
www.irf.com
1
10/03/00

30SLJQ045 Related Products

30SLJQ045
Description 30 A, 45 V, SILICON, RECTIFIER DIODE
Is it lead-free? Contains lead
Maker International Rectifier ( Infineon )
package instruction R-CBCC-N3
Contacts 3
Reach Compliance Code unknown
ECCN code EAR99
Other features HIGH RELIABILITY
application EFFICIENCY
Shell connection CATHODE
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
JESD-30 code R-CBCC-N3
Maximum non-repetitive peak forward current 270 A
Number of components 1
Phase 1
Number of terminals 3
Maximum operating temperature 150 °C
Minimum operating temperature -55 °C
Maximum output current 30 A
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR
Package form CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Certification status Not Qualified
Maximum repetitive peak reverse voltage 45 V
surface mount YES
technology SCHOTTKY
Terminal form NO LEAD
Terminal location BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED
Base Number Matches 1

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