BRT21, BRT22, BRT23
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing
FEATURES
• High input sensitivity I
FT
= 1 mA
• I
TRMS
= 300 mA
A 1
C 2
NC 3
ZCC*
6 MT2
5 NC
4 MT1
• High static dV/dt 10 000 V/μs
• Electrically insulated between input and output
circuit
• Microcomputer compatible
• Trigger current
- (I
FT
< 1.2 mA) BRT22F, BRT23F,
- (I
FT
< 2 mA) BRT21H, BRT22H, BRT23H
- (I
FT
< 3 mA) BRT21M, BRT22M, BRT23M
• Available surface mount and on on tape and reel
• Zero voltage crossing detector
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
*Zero crossing circuit
V
D E
i179030_3
i179004-10
DESCRIPTION
The BRT21, BRT22, BRT23 product family consists of AC
switch optocouplers with zero voltage detectors with two
electrically insulated lateral power ICs which integrate a
thyrister system, a photo detector and noise suppression at
the output and an IR GaAs diode input.
High input sensitivity is achieved by using an emitter
follower phototransistor and a SCR predriver resulting in an
LED trigger current of less than 2 mA or 3 mA (DC). Inverse
parallel SCRs provide commutating dV/dt greater than
10 kV/μs.
The zero cross line voltage detection circuit consists of two
MOSFETS and a photodiode.
The BRT21, BRT22, BRT23 product family isolates
low-voltage logic from 120, 230, and 380 VAC lines to
control resistive, inductive or capacitive loads including
motors, solenoids, high current thyristers or TRIAC and
relays.
APPLICATIONS
• Industrial controls
• Office equipment
• Consumer appliances
AGENCY APPROVALS
• UL file no. E52744 system code H
• DIN EN 60747-5-2 (VDE 0844)/DIN EN 60747-5-5
(pending) available with option 1
• CQC
ORDERING INFORMATION
DIP-6
Option 6
B
R
T
2
#
x
-
X
0
#
#
T
7.62 mm
10.16 mm
PART NUMBER
PACKAGE OPTION
TAPE
AND
REEL
Option 7
Option 8
Option 9
9.27 mm
> 0.7 mm
> 0.1 mm
AGENCY
CERTIFIED/PACKAGE
UL
DIP-6
DIP-6, 400 mil, option 6
SMD-6, option 7
SMD-6, option 9
BRT21H
-
V
DRM
(V)
≤
400
I
FT
= 2 mA
I
FT
= 3 mA
BRT21M
-
-
-
I
FT
= 1.2 mA
BRT22F
BRT22F-
X006
BRT22F-
X007T
(1)
BRT22F-
X009T
(1)
≤
600
I
FT
= 2 mA
BRT22H
-
BRT22H-
X007T
(1)
-
I
FT
= 3 mA
BRT22M
-
-
-
I
FT
= 1.2 mA
BRT23F
BRT23F-
X006
BRT23F-
X007T
(1)
BRT23F-
X009T
≤
800
I
FT
= 2 mA
BRT23H
BRT23H-
X006
BRT23H-
X007T
(1)
-
I
FT
= 3 mA
BRT23M
-
BRT23M-
X007T
-
BRT21H-
X007
-
Rev. 1.8, 02-Dec-11
Document Number: 83690
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BRT21, BRT22, BRT23
www.vishay.com
AGENCY
CERTIFIED/PACKAGE
UL, VDE
DIP-6
DIP-6, option 6
SMD-6, option 7
SMD-6, option 8
V
DRM
(V)
≤
400
I
FT
= 2 mA
-
BRT21H-
X016
-
-
I
FT
= 3 mA
-
BRT21M-
X016
-
-
I
FT
= 1.2 mA
BRT22F-
X001
BRT22F-
X016
BRT22F-
X017T
-
≤
600
I
FT
= 2 mA
BRT22H-
X001
BRT22H-
X016
BRT22H-
X017
-
I
FT
= 3 mA
-
BRT22M-
X016
-
-
I
FT
= 1.2 mA
-
-
-
-
≤
800
I
FT
= 2 mA
BRT23H-
X001
BRT22H-
X016
-
BRT23H-
X018T
I
FT
= 3 mA
-
BRT23M-
X016
-
-
Vishay Semiconductors
Note
(1)
Also available in tube, do not put T on the end.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate from 25 °C
OUTPUT
BRT21
Peak off-state voltage
On state RMS current
Single cycle surge current
Power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74)
Pollution degree (DIN VDE 0109)
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
(1)
max.
≤
10 s dip soldering
≥
0.5 mm from case bottom
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
CTI
R
IO
R
IO
T
stg
T
amb
T
sld
t=1s
V
ISO
5300
2
≥
7
≥
7
≥
175
≥
10
12
≥
10
11
- 40 to + 150
- 40 to + 100
260
Ω
Ω
°C
°C
°C
mm
mm
V
RMS
P
diss
BRT22
BRT23
V
DRM
V
DRM
V
DRM
I
TRM
400
600
800
300
3
600
6.6
V
V
V
mA
A
mW
mW/°C
I
R
= 10 μA
V
R
I
F
I
FSM
P
diss
6
60
2.5
100
1.33
V
mA
A
mW
mW/°C
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Rev. 1.8, 02-Dec-11
Document Number: 83690
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BRT21, BRT22, BRT23
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 10 mA
V
R
= 6 V
f = 1 MHz, V
F
= 0 V
PART
SYMBOL
V
F
I
R
C
O
R
thJA
MIN.
TYP.
1.16
0.1
25
750
MAX.
1.35
10
UNIT
V
μA
pF
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to
ambient
OUTPUT
BRT21
Peak off-state voltage
I
D(RMS)
= 100 μA
V
D
= V
DRM
, T
amb
= 100 °C,
I
F
= 0 mA
I
T
= 300 mA
PF = 1, V
T(RMS)
= 1.7 V
f = 50 Hz
BRT22
BRT23
Off-state current
On-state voltage
On-state current
Surge (non-repetitive),
on-state current
Trigger current temp. gradient
Inhibit voltage temp. gradient
Off-state current in inhibit state
Holding current
Latching current
Zero cross inhibit voltage
Turn-on time
Turn-off time
Critical rate of rise of off-state
voltage
Critical rate of rise of voltage at
current commutation
Critical rate of rise of on-state at
current commutation
Thermal resistance, junction to
ambient
COUPLER
Critical rate of rise of coupled
input/output voltage
Common mode coupling
capacitance
Capacitance (input to output)
Isolation resistance
f = 1 MHz, V
IO
= 0 V
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
V
D
= 5 V, F - versions
Trigger current
V
D
= 5 V, H - versions
V
D
= 5 V, M - versions
I
T
= 0 A, V
RM
= V
DM
= V
D(RMS)
dV
IO
/dt
C
CM
C
IO
R
is
R
is
I
FT
I
FT
I
FT
≥
10 000
0.01
0.8
≥
10
12
10
11
1.2
2
3
V/μs
pF
pF
Ω
Ω
mA
mA
mA
V
T
= 2.2 V
I
F
= rated I
FT
V
RM
= V
DM
= V
D(RMS)
PF = 1, I
T
= 300 mA
V
D
= 0.67 V
DRM
, T
j
= 25 °C
V
D
= 0.67 V
DRM
, T
j
= 80 °C
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
j
= 25 °C
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
j
= 85 °C
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
j
= 25 °C
I
F
= I
FT1
, V
DRM
I
D(RMS)
V
TM
I
TM
I
TSM
ΔI
FT1
/ΔT
j
ΔI
FT2
/ΔT
j
ΔV
DINH
/ΔT
j
400
V
DM
600
800
10
1.7
100
3
300
3
7
7
- 20
50
65
5
15
35
50
10 000
5000
8
7
12
125
25
200
500
14
14
μA
V
mA
A
μA/K
μA/K
mV/K
μA
μA
mA
V
μs
μs
V/μs
V/μs
V/μs
V/μs
A/ms
K/W
V
I
DINH
I
H
I
L
V
IH
t
on
t
off
dV/dt
cr
dV/dt
cr
dV/dt
crq
dV/dt
crq
dI/dt
crq
R
thJA
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.8, 02-Dec-11
Document Number: 83690
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BRT21, BRT22, BRT23
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
MIN.
TYP.
40/100/21
CTI
175
6000
630
200
400
175
standard DIP-6
standard DIP-6
400 mil DIP-6
400 mil DIP-6
7
7
8
8
399
V
V
mW
mA
°C
mm
mm
mm
mm
MAX.
UNIT
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage distance
Clearance distance
Creepage distance
Clearance distance
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
POWER FACTOR CONSIDERATIONS
C
s
- Shunt Capacitance (µF)
A snubber is not needed to eliminate false operation of the
TRIAC driver because of the high static and commutating
dV/dt with loads between 1.0 and 0.8 power factors. When
inductive loads with power factors less than 0.8 are being
driven, include a RC snubber or a single capacitor directly
across the device to damp the peak commutating dV/dt
spike. Normally a commutating dV/dt causes a turning-off
device to stay on due to the stored energy remaining in the
turning-off device.
But in the case of a zero voltage crossing optotriac, the
commutating dV/dt spikes can inhibit one half of the TRIAC
from turning on. If the spike potential exceeds the inhibit
voltage of the zero cross detection circuit, half of the TRIAC
will be heldoff and not turn-on. This hold-off condition can
be eliminated by using a snubber or capacitor placed
directly across the optotriac as shown in figure 1. Note that
the value of the capacitor increases as a function of the load
current.
The hold-off condition also can be eliminated by providing a
higher level of LED drive current. The higher LED drive
provides a larger photocurrent which causes the
phototransistor to turn-on before the commutating spike
has activated the zero cross network. Figure 2 shows the
relationship of the LED drive for power factors of less than
1.0. The curve shows that if a device requires 1.5 mA for a
resistive load, then 1.8 times 2.7 mA) that amount would be
required to control an inductive load whose power factor is
less than 0.3.
1
C
s
(µF) = 0.0032 (µF)*10^0.0066 I
L
(mA)
0.1
0.01
TA = 25 °C, PF = 0.3
IF = 2.0 mA
0.001
0
iil410_01
50
100 150 200 250 300 350 400
I
L
- Load Current (mA
RMS
)
Fig. 1 - Shunt Capacitance vs. Load Current
Rev. 1.8, 02-Dec-11
Document Number: 83690
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BRT21, BRT22, BRT23
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
2.0
150
NI
Fth
- Normalized LED
Trigger Current
1.8
1.6
1.4
1.2
1.0
0.8
0.0
LED - LED Power (mW)
I
Fth
Normalized to I
Fth
at PF = 1.0
T
A
= 25 °C
100
50
0.2
0.4
0.6
0.8
1.0
1.2
0
- 60 - 40 - 20
iil410_05
0
20
40
60
80
100
iil410_02
PF - Power Factor
T
A
- Ambient Temperature (°C)
Fig. 2 - Normalized LED Trigger Current vs. Power Factor
Fig. 5 - Maximum LED Power Dissipation
1.4
10
3
5
T
A
= - 55 °C
10
2
T
A
= 25 °C
T
j
= 25 °C
100 °C
V
F
- Forward Voltage (V)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
I
T
(mA)
5
I
T
= f(V
T
),
Parameter: T
j
T
A
= 85 °C
10
1
5
10
0
1
10
100
iil410_06
0
1
2
3
4
iil410_03
I
F
- Forward Current (mA)
V
T
(V)
Fig. 3 - Forward Voltage vs. Forward Current
Fig. 6 - Typical Output Characteristics
10 000
If(pk) - Peak LED Current (mA)
τ
Duty Factor
1000
0.005
0.01
0.02
0.05
0.1
0.2
0.5
400
I
TRMS
= f(VT),
R
thJA
= 150 K/W
Device switch
soldered in pcb
or base plate.
300
DF =
τ
/t
I
TRMS
(mA)
10
1
t
200
100
100
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
iil410_04
0
0
iil410_07
20
40
60
80
100
t - LED Pulse Duration (s)
T
A
(°C)
Fig. 7 - Current Reduction
Fig. 4 - Peak LED Current vs. Duty Factor,
τ
Rev. 1.8, 02-Dec-11
Document Number: 83690
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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