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317B

Description
10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size21KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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317B Overview

10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE

HVC317B
Variable Capacitance Diode for tuner
ADE-208-445(Z)
Rev 0
Apl. 1996
Features
High capacitance ratio. (n =13.0 min)
Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
HVC317B
Laser Mark
A5
Package Code
UFP
Outline
Cathode mark
Mark
1
A5
2
1. Cathode
2. Anode

317B Related Products

317B HVC317B
Description 10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE 10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE

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