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HVC317B

Description
10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size21KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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HVC317B Overview

10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE

HVC317B Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeSC-79
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage35 V
ConfigurationSINGLE
Diode Capacitance Tolerance12.2%
Minimum diode capacitance ratio13
Nominal diode capacitance10.25 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
HVC317B
Variable Capacitance Diode for tuner
ADE-208-445(Z)
Rev 0
Apl. 1996
Features
High capacitance ratio. (n =13.0 min)
Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
HVC317B
Laser Mark
A5
Package Code
UFP
Outline
Cathode mark
Mark
1
A5
2
1. Cathode
2. Anode

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Description 10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE 10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
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