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XL1001-BD-000V

Description
17.0-35.0 GHz GaAs MMIC Low Noise Amplifier
CategoryWireless rf/communication    Radio frequency and microwave   
File Size336KB,8 Pages
ManufacturerMimix Broadband (MACOM)
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric View All

XL1001-BD-000V Overview

17.0-35.0 GHz GaAs MMIC Low Noise Amplifier

XL1001-BD-000V Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMimix Broadband (MACOM)
Reach Compliance Codeunknow
Other featuresLOW NOISE
structureCOMPONENT
Gain12 dB
Maximum input power (CW)15 dBm
JESD-609 codee3
Maximum operating frequency35000 MHz
Minimum operating frequency17000 MHz
Maximum operating temperature85 °C
Minimum operating temperature-55 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Terminal surfaceMatte Tin (Sn)
17.0-35.0 GHz GaAs MMIC
Low Noise Amplifier
July 2007 - Rev 13-Jul-07
L1001-BD
Chip Device Layout
Features
Balanced Design
Excellent Input/Output Match
Self-biased Architecture
14.0 dB Small Signal Gain
2.5 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s two stage balanced 17.0-35.0 GHz
GaAs MMIC low noise amplifier has a small signal gain
of 14.0 dB with a noise figure of 2.5 dB across the
band. This MMIC uses Mimix Broadband’s 0.15 µm
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
85 mA
+15.0 dBm
-65 to +165
O
C
-55 to MTTF Table
1
MTTF Table
1
(1) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
3
Output Return Loss (S22)
3
Small Signal Gain (S21)
3
Gain Flatness ( S21)
Reverse Isolation (S12)
3
Noise Figure (NF) @ 21.0-35.0 GHz
3
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (V5)
Supply Current (Id)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
mA
Min.
17.0
8.0
15.0
12.0
-
25.0
-
-
-
-
-
Typ.
-
10.0
18.0
14.0
+/-1.5
30.0
2.5
+4.0
2
+16.0
2
+5.0
55
Max.
35.0
-
-
-
-
-
3.5
-
-
+5.5
65
(2) See plots for additional information.
(3) Unless otherwise indicated min/max over 17.0-35.0 GHz and biased at Vd=5V, Id=55mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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